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P6SMB82CAT3 PDF预览

P6SMB82CAT3

更新时间: 2024-11-30 04:08:35
品牌 Logo 应用领域
安森美 - ONSEMI 二极管光电二极管局域网
页数 文件大小 规格书
6页 71K
描述
600 Watt Peak Power Zener Transient Voltage Suppressors

P6SMB82CAT3 数据手册

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P6SMB11CAT3 Series  
600 Watt Peak Power Zener  
Transient Voltage Suppressors  
Bidirectional*  
The SMB series is designed to protect voltage sensitive  
components from high voltage, high energy transients. They have  
excellent clamping capability, high surge capability, low zener  
impedance and fast response time. The SMB series is supplied in  
ON Semiconductor’s exclusive, cost-effective, highly reliable  
Surmetict package and is ideally suited for use in communication  
systems, automotive, numerical controls, process controls, medical  
equipment, business machines, power supplies and many other  
industrial/consumer applications.  
http://onsemi.com  
PLASTIC SURFACE MOUNT  
ZENER OVERVOLTAGE  
TRANSIENT SUPPRESSORS  
9.4−78 VOLTS  
Features  
600 WATT PEAK POWER  
Working Peak Reverse Voltage Range − 9.4 to 77.8 V  
Standard Zener Breakdown Voltage Range − 11 to 91 V  
Peak Power − 600 W @ 1 ms  
ESD Rating of Class 3 (>16 KV) per Human Body Model  
Maximum Clamp Voltage @ Peak Pulse Current  
Low Leakage < 5 mA Above 10 V  
UL 497B for Isolated Loop Circuit Protection  
Response Time is Typically < 1 ns  
Pb−Free Packages are Available  
SMB  
CASE 403A  
PLASTIC  
Mechanical Characteristics:  
CASE: Void-Free, Transfer-Molded, Thermosetting Plastic  
FINISH: All External Surfaces are Corrosion Resistant and Leads are  
Readily Solderable  
MARKING DIAGRAM  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
LEADS: Modified L−Bend Providing More Contact Area to Bond Pads  
POLARITY: Polarity Band Will Not be Indicated  
MOUNTING POSITION: Any  
AYWW  
xxC G  
G
xxC = Device Code  
MAXIMUM RATINGS  
A
Y
= Assembly Location  
= Year  
Rating  
Symbol Value  
Unit  
WW = Work Week  
Peak Power Dissipation (Note 1) @ T = 25°C,  
Pulse Width = 1 ms  
P
PK  
600  
W
L
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
DC Power Dissipation @ T = 75°C  
P
3.0  
W
L
D
Measured Zero Lead Length (Note 2)  
Derate Above 75°C  
ORDERING INFORMATION  
40  
25  
mW/°C  
°C/W  
Thermal Resistance, Junction−to−Lead  
R
q
JL  
Device  
Package  
Shipping  
DC Power Dissipation (Note 3) @ T = 25°C  
P
0.55  
4.4  
226  
W
mW/°C  
°C/W  
A
D
P6SMBxxCAT3  
P6SMBxxCAT3G  
SMB  
2500/Tape & Reel  
2500/Tape & Reel  
Derate Above 25°C  
Thermal Resistance, Junction−to−Ambient  
R
q
JA  
SMB  
Operating and Storage Temperature Range  
T , T  
−65 to  
+150  
°C  
(Pb−Free)  
J
stg  
The “T3” suffix refers to a 13 inch reel.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. 10 X 1000 ms, non−repetitive  
2. 1square copper pad, FR−4 board  
Devices listed in bold, italic are ON Semiconductor  
Preferred devices. Preferred devices are recommended  
choices for future use and best overall value.  
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as  
shown in 403A case outline dimensions spec.  
*Please see P6SMB6.8AT3 to P6SMB200AT3 for Unidirectional devices.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
July, 2006 − Rev. 8  
P6SMB11CAT3/D  
 

P6SMB82CAT3 替代型号

型号 品牌 替代类型 描述 数据表
P6SMB82CAT3G LITTELFUSE

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Trans Voltage Suppressor Diode, 600W, 70.1V V(RWM), Bidirectional, 1 Element, Silicon, DO-
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