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P6SMB8.2CA

更新时间： 2024-11-04 05:59:19
品牌 Logo 应用领域
力特 - LITTELFUSE 二极管
页数 文件大小 规格书
5页 138K
描述
Transient Voltage Suppression Diodes

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中文翻译

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P6SMB8.2CA 技术参数

是否Rohs认证： 符合生命周期：Active
零件包装代码：DO-214AA包装说明：SMB, 2 PIN
针数：2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：0.84其他特性：EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
最大击穿电压：8.61 V最小击穿电压：7.79 V
击穿电压标称值：8.2 V最大钳位电压：12.1 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-214AA
JESD-30 代码：R-PDSO-J2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值反向功率耗散：600 W
元件数量：1端子数量：2
最高工作温度：150 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性：BIDIRECTIONAL最大功率耗散：5 W
认证状态：Not Qualified最大重复峰值反向电压：7.02 V
子类别：Transient Suppressors表面贴装：YES
技术：AVALANCHE端子面层：Matte Tin (Sn)
端子形式：J BEND端子位置：DUAL
处于峰值回流温度下的最长时间：40Base Number Matches：1

P6SMB8.2CA 数据手册

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TransientVoltage Suppression Diodes  
Surface Mount – 600W > P6SMB series  
RoHS  
P6SMB Series  
Description  
The P6SMB series is designed specifically to protect  
sensitive electronic equipment from voltage transients  
induced by lightning and other transient voltage events.  
Features  
tꢀ)BMPHFOꢁ'SFF  
tꢀ 3P)4ꢀDPNQMJBOU  
tꢀ 'PSꢀTVSGBDFꢀNPVOUFEꢀ  
applications to optimize  
board space  
tꢀ 'BTUꢀSFTQPOTFꢀUJNFꢄꢀ  
typically less than 1.0ps  
from 0V to BV min  
tꢀ &YDFMMFOUꢀDMBNQJOHꢀ  
capability  
tꢀ -PXꢀJODSFNFOUBMꢀTVSHFꢀ  
resistance  
tꢀ 5ZQJDBMꢀ*R less than 1ꢀA  
above 12V  
tꢀ )JHIꢀ5FNQFSBUVSFꢀ  
soldering guaranteed:  
260°C/40 seconds at  
terminals  
tꢀ 1MBTUJDꢀQBDLBHFꢀIBTꢀ  
Underwriters Laboratory  
Flammability 94V-O  
tꢀ -PXꢀQSPmMFꢀQBDLBHF  
tꢀ #VJMUꢁJOꢀTUSBJOꢀSFMJFG  
tꢀ 5ZQJDBMꢀNBYJNVNꢀ  
temperature coefficient  
ΔVBR = 0.1% x VBR@25°C x ΔT  
Agency Approvals  
AGENCY  
AGENCY FILE NUMBER  
E230531  
tꢀ (MBTTꢀQBTTJWBUFEꢀDIJQꢀ  
junction  
tꢀ ꢂꢃꢃ8ꢀQFBLꢀQVMTFꢀQPXFSꢀ  
capability at 10×1000μs  
waveform, repetition rate  
(duty cycles):0.01%  
Maximum Ratings andThermal Characteristics  
(TA=25OC unless otherwise noted)  
tꢀ .BUUFꢀ5JOꢀ-FBEoGSFFꢀ1MBUFE  
Parameter  
Symbol  
PPPM  
Value  
600  
Unit  
W
Peak Pulse Power Dissipation at  
TA=25ºC by 10x1000ꢀs waveform  
(Fig.1)(Note 1), (Note 2)  
Applications  
Power Dissipation on infinite heat  
sink atTA=50OC  
PM(AV)  
IFSM  
5.0  
W
A
TVS devices are ideal for the protection of I/O Interfaces,  
CC bus and other vulnerable circuits used inTelecom,  
V
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave (Note 3)  
100  
Computer, Industrial and Consumer electronic applications.  
Maximum Instantaneous Forward  
Voltage at 50A for Unidirectional  
only (Note 4)  
VF  
3.5V/5.0  
V
Operating Junction and Storage  
Temperature Range  
T , TSTG -65 to 150  
°C  
J
TypicalThermal Resistance Junction  
to Lead  
RuJL  
RuJA  
20  
°C/W  
°C/W  
TypicalThermal Resistance Junction  
to Ambient  
100  
Notes:  
1. Non-repetitive current pulse , per Fig. 3 and derated aboveTA = 25OC per Fig. 2.  
2. Mounted on copper pad area of 0.2x0.2” (5.0 x 5.0mm) to each terminal.  
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional  
device only,duty cycle=4 per minute maximum.  
4. VF<3.5V for VBR <_ 200V and VF<5.0V for VBR >_ 201V.  
©2009 Littelfuse, Inc.  
29  
Revision: January 09, 2009  
P6SMB Series  
Specifications are subject to change without notice.  
Please refer to http://www.Littelfuse.com/series/P6SMB.html for current information.  
12345

中文翻译

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P6SMB8.2CA 替代型号

型号 品牌 替代类型 描述 数据表
P6SMBJ8.2CA LITTELFUSE

完全替代

 Silicon Avalanche Diodes - 600W Surface Mount Transient Voltage Supressors
P6SMB8.2CA-E3/5B VISHAY

功能相似

 TVS DIODE 7.02V 12.1V DO214AA

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P6SMB8.2CA-51 VISHAY

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P6SMB8.2CA-E3/52 VISHAY

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 		DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2
P6SMB8.2CA-E3/55 VISHAY

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 		Trans Voltage Suppressor Diode, 600W, 7.02V V(RWM), Bidirectional, 1 Element, Silicon, DO-
P6SMB8.2CA-E3/5B VISHAY

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 		TVS DIODE 7.02V 12.1V DO214AA

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