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P6SMB82

更新时间： 2024-11-28 13:45:15
品牌 Logo 应用领域
力特 - LITTELFUSE 电子二极管瞬态抑制器
页数 文件大小 规格书
5页 138K
描述
P6SMB系列专门设计用于保护敏感电子设备不受闪电及其他瞬态电压现象引起的瞬态电压的影响。 功能与特色: 应用:

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中文翻译

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P6SMB82 数据手册

 浏览型号P6SMB82的Datasheet PDF文件第2页浏览型号P6SMB82的Datasheet PDF文件第3页浏览型号P6SMB82的Datasheet PDF文件第4页浏览型号P6SMB82的Datasheet PDF文件第5页 
TransientVoltage Suppression Diodes  
Surface Mount – 600W > P6SMB series  
RoHS  
P6SMB Series  
Description  
The P6SMB series is designed specifically to protect  
sensitive electronic equipment from voltage transients  
induced by lightning and other transient voltage events.  
Features  
tꢀ)BMPHFOꢁ'SFF  
tꢀ 3P)4ꢀDPNQMJBOU  
tꢀ 'PSꢀTVSGBDFꢀNPVOUFEꢀ  
applications to optimize  
board space  
tꢀ 'BTUꢀSFTQPOTFꢀUJNFꢄꢀ  
typically less than 1.0ps  
from 0V to BV min  
tꢀ &YDFMMFOUꢀDMBNQJOHꢀ  
capability  
tꢀ -PXꢀJODSFNFOUBMꢀTVSHFꢀ  
resistance  
tꢀ 5ZQJDBMꢀ*R less than 1ꢀA  
above 12V  
tꢀ )JHIꢀ5FNQFSBUVSFꢀ  
soldering guaranteed:  
260°C/40 seconds at  
terminals  
tꢀ 1MBTUJDꢀQBDLBHFꢀIBTꢀ  
Underwriters Laboratory  
Flammability 94V-O  
tꢀ -PXꢀQSPmMFꢀQBDLBHF  
tꢀ #VJMUꢁJOꢀTUSBJOꢀSFMJFG  
tꢀ 5ZQJDBMꢀNBYJNVNꢀ  
temperature coefficient  
ΔVBR = 0.1% x VBR@25°C x ΔT  
Agency Approvals  
AGENCY  
AGENCY FILE NUMBER  
E230531  
tꢀ (MBTTꢀQBTTJWBUFEꢀDIJQꢀ  
junction  
tꢀ ꢂꢃꢃ8ꢀQFBLꢀQVMTFꢀQPXFSꢀ  
capability at 10×1000μs  
waveform, repetition rate  
(duty cycles):0.01%  
Maximum Ratings andThermal Characteristics  
(TA=25OC unless otherwise noted)  
tꢀ .BUUFꢀ5JOꢀ-FBEoGSFFꢀ1MBUFE  
Parameter  
Symbol  
PPPM  
Value  
600  
Unit  
W
Peak Pulse Power Dissipation at  
TA=25ºC by 10x1000ꢀs waveform  
(Fig.1)(Note 1), (Note 2)  
Applications  
Power Dissipation on infinite heat  
sink atTA=50OC  
PM(AV)  
IFSM  
5.0  
W
A
TVS devices are ideal for the protection of I/O Interfaces,  
CC bus and other vulnerable circuits used inTelecom,  
V
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave (Note 3)  
100  
Computer, Industrial and Consumer electronic applications.  
Maximum Instantaneous Forward  
Voltage at 50A for Unidirectional  
only (Note 4)  
VF  
3.5V/5.0  
V
Operating Junction and Storage  
Temperature Range  
T , TSTG -65 to 150  
°C  
J
TypicalThermal Resistance Junction  
to Lead  
RuJL  
RuJA  
20  
°C/W  
°C/W  
TypicalThermal Resistance Junction  
to Ambient  
100  
Notes:  
1. Non-repetitive current pulse , per Fig. 3 and derated aboveTA = 25OC per Fig. 2.  
2. Mounted on copper pad area of 0.2x0.2” (5.0 x 5.0mm) to each terminal.  
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional  
device only,duty cycle=4 per minute maximum.  
4. VF<3.5V for VBR <_ 200V and VF<5.0V for VBR >_ 201V.  
©2009 Littelfuse, Inc.  
29  
Revision: January 09, 2009  
P6SMB Series  
Specifications are subject to change without notice.  
Please refer to http://www.Littelfuse.com/series/P6SMB.html for current information.  
12345

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P6SMB82 替代型号

型号 品牌 替代类型 描述 数据表
SMBJ70A-E3/52 VISHAY

功能相似

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P6SMB82A BOURNS

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P6SMB82A-E3/52 VISHAY

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 DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2

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