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P6FMBJ110A

更新时间: 2024-11-17 22:26:59
品牌 Logo 应用领域
RECTRON 瞬态抑制器二极管光电二极管局域网
页数 文件大小 规格书
4页 1087K
描述
GPP TRANSIENT VOLTAGE SUPPRESSOR (600 WATT PEAK POWER 1.0 WATT STEADY STATE)

P6FMBJ110A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AA
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.21
Is Samacsys:N其他特性:LOW ZENER IMPEDANCE
最大击穿电压:116 V最小击穿电压:105 V
最大钳位电压:152 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
JESD-609代码:e3最大非重复峰值反向功率耗散:600 W
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):265
极性:UNIDIRECTIONAL最大功率耗散:5 W
认证状态:Not Qualified最大重复峰值反向电压:94 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

P6FMBJ110A 数据手册

 浏览型号P6FMBJ110A的Datasheet PDF文件第2页浏览型号P6FMBJ110A的Datasheet PDF文件第3页浏览型号P6FMBJ110A的Datasheet PDF文件第4页 
TVS  
RECTRON  
TECHNICAL SPECIFICATION  
P6FMBJ  
SERIES  
SEMICONDUCTOR  
GPP TRANSIENT VOLTAGE SUPPRESSOR  
600 WATT PEAK POWER 1.0 WATT STEADY STATE  
FEATURES  
* Plastic package has underwriters laboratory  
* Glass passivated chip construction  
* 600 watt surage capability at 1ms  
* Excellent clamping capability  
* Low zener impedance  
DO-214AA  
* Fast response time  
Ratings at 25 oC ambient temperature unless otherwise specified.  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Dimensions in inches and (millimeters)  
DEVICES FOR BIPOLAR APPLICATIONS  
For Bidirectional use C or CA suffix for types P6FMBJ6.8 thru P6FMBJ400  
Electrical characteristics apply in both direction  
MAXIMUM RATINGS (At T  
A
= 25oC unless otherwise noted)  
SYMBOL  
VALUE  
UNITS  
Watts  
RATINGS  
P
PPM  
Minimum 600  
Peak Power Dissipation with a 10/1000uS (Note 1,2 Fig.1)  
Peak Pulse Durrent with a 10/1000uS waveform  
( Note 1, Fig.3 )  
I
PPM  
SEE TABLE 1  
Amps  
Amps  
Amps  
Steady State Power Dissipation at T  
L
= 75oC ( Note 2 )  
P
M
(
AV  
)
5.0  
Peak Forward Surge Current, 8.3mS single half sine wave super-  
imposed on rated load (Jedec Method)(Note 3,2) unidirectional only  
I
FSM  
100  
Maximum Instantaneous Forward Voltage at 50A for  
unidirectional only ( Note 3,4 )  
V
F
SEE NOTE 4  
-55 to + 150  
Volts  
0 C  
T
J
, TSTG  
Operating and Storage Temperature Range  
1998-8  
NOTES : 1. Non-repetitive current pulse, per Fig.3 and derated above T  
A
= 25oC per Fig.2.  
2. Mounted on 0.2 X 0.2” ( 5.0 X 5.0mm ) copper pad to each terminal.  
3. Measured on 8.3mS single half Sine-Wave or equivalent wave, duty cycle = 4 pulses per minute maximum.  
4. V = 3.5V on P6FMBJ6.8 thru P6FMB90 devices and V = 5.0V on P6FMBJ100 thur P6FMBJ400 devices.  
Back  
F
F

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