P6FMBJ110C

更新时间： 2024-11-18 13:12:11

品牌	Logo	应用领域
RECTRON		瞬态抑制器二极管光电二极管局域网
页数	文件大小	规格书
4页	1087K
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数据手册

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P6FMBJ110C 数据手册

TVS

RECTRON

TECHNICAL SPECIFICATION

P6FMBJ

SERIES

SEMICONDUCTOR

GPP TRANSIENT VOLTAGE SUPPRESSOR

600 WATT PEAK POWER 1.0 WATT STEADY STATE

FEATURES

* Plastic package has underwriters laboratory

* Glass passivated chip construction

* 600 watt surage capability at 1ms

* Excellent clamping capability

* Low zener impedance

DO-214AA

* Fast response time

Ratings at 25 ^oC ambient temperature unless otherwise specified.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature unless otherwise specified.

Dimensions in inches and (millimeters)

DEVICES FOR BIPOLAR APPLICATIONS

For Bidirectional use C or CA suffix for types P6FMBJ6.8 thru P6FMBJ400

Electrical characteristics apply in both direction

MAXIMUM RATINGS (At T

= 25^oC unless otherwise noted)

SYMBOL

VALUE

UNITS

Watts

RATINGS

PPM

Minimum 600

Peak Power Dissipation with a 10/1000uS (Note 1,2 Fig.1)

Peak Pulse Durrent with a 10/1000uS waveform

( Note 1, Fig.3 )

PPM

SEE TABLE 1

Amps

Steady State Power Dissipation at T

= 75^oC ( Note 2 )

(

)

5.0

Peak Forward Surge Current, 8.3mS single half sine wave super-

imposed on rated load (Jedec Method)(Note 3,2) unidirectional only

FSM

100

Maximum Instantaneous Forward Voltage at 50A for

unidirectional only ( Note 3,4 )

SEE NOTE 4

-55 to + 150

Volts

⁰C

, TSTG

Operating and Storage Temperature Range

1998-8

NOTES : 1. Non-repetitive current pulse, per Fig.3 and derated above T

= 25^oC per Fig.2.

2. Mounted on 0.2 X 0.2” ( 5.0 X 5.0mm ) copper pad to each terminal.

3. Measured on 8.3mS single half Sine-Wave or equivalent wave, duty cycle = 4 pulses per minute maximum.

4. V = 3.5V on P6FMBJ6.8 thru P6FMB90 devices and V = 5.0V on P6FMBJ100 thur P6FMBJ400 devices.

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P6FMBJ11A	RECTRON	获取价格	GPP TRANSIENT VOLTAGE SUPPRESSOR (600 WATT PEAK POWER 1.0 WATT STEADY STATE)
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P6FMBJ11CA	RECTRON	获取价格	Trans Voltage Suppressor Diode, 600W, 9.4V V(RWM), Bidirectional, 1 Element, Silicon, DO-2