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P650-U

更新时间： 2024-09-17 09:55:55
品牌 Logo 应用领域
伯恩斯 - BOURNS /
页数 文件大小 规格书
6页 701K
描述
Extremely high speed performance

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P650-U 数据手册

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Features  
Applications  
■ Formerly  
brand  
■ Mb Ethernet port protection  
■ Gb Ethernet port protection  
■ Isolated and floating interfaces  
■ Extremely high speed performance  
■ Blocks high voltages and currents  
■ Low insertion loss  
■ Two TBU™ protectors in one small package  
■ Very high bandwidth; GHz compatible  
■ RoHS compliant*, UL Recognized  
TBU™ P650-U and P850-U Protectors  
Transient Blocking Units - TBU™ Devices  
Agency Approval  
Bourns® Model P650-U and P850-U products are high speed,  
unidirectional protection components, constructed using  
MOSFET semiconductor technology, designed to protect against  
faults caused by short circuits, AC power cross, induction and  
lightning surges.  
UL recognized component File # E315805.  
Industry Standards  
Description  
Model  
P650-U  
P850-U  
Port Type 3, 5  
Telcordia GR-1089  
The TBU™ high speed protector, triggering as a function of the  
MOSFET, blocks surges and provides an effective barrier behind  
which sensitive electronics are not exposed to large voltages or  
currents during surge events. The TBU™ device is provided in a  
surface mount DFN package and meets industry standard  
requirements such as RoHS and Pb Free solder reflow profiles.  
Port Type 2, 4  
K.20, K.20E, K.21, K.21E,  
K.45  
ITU-T  
P850-U  
Absolute Maximum Ratings (T  
= 25 °C)  
amb  
Symbol  
Parameter  
Maximum protection voltage for impulse faults with rise time ≥ 1 µsec  
Maximum protection voltage for continuous V  
Value  
Unit  
P650-Uxxx-WH  
P850-Uxxx-WH  
650  
850  
V
V
V
imp  
faults connected as P650-Uxxx-WH  
300  
425  
rms  
V
rms  
a series pair (refer to page 3 Test Configuration Diagram)  
P850-Uxxx-WH  
T
T
Operating temperature range  
-40 to +85  
°C  
°C  
op  
Storage temperature range  
-65 to +150  
stg  
Electrical Characteristics (T  
= 25 °C)  
amb  
Symbol  
Parameter  
Min.  
Typ.  
Max.  
180  
260  
180  
260  
Unit  
P650-U180-WH  
Maximum current through the device that will not cause  
current blocking  
P650-U260-WH  
P850-U180-WH  
P850-U260-WH  
P650-U180-WH  
P650-U260-WH  
P850-U180-WH  
P850-U260-WH  
P650-U180-WH  
P650-U260-WH  
P850-U180-WH  
P850-U260-WH  
P650-Uxxx-WH  
P850-Uxxx-WH  
I
I
I
mA  
op  
220  
330  
220  
330  
Typical current for the device to go from normal operating  
state to protected state  
mA  
mA  
trigger  
out  
360  
520  
360  
520  
7
Maximum current through the device  
Series resistance of the TBU™ device  
6
8
Ω
Ω
R
R
TBU  
bal  
9
0.5  
Line-to line series resistance difference between two TBU™ device  
Maximum time for the device to go from normal operating  
state to protected state  
P650-Uxxx-WH  
P850-Uxxx-WH  
t
1
µs  
block  
Current through the triggered TBU™ device with 50 Vdc circuit  
voltage  
I
1
mA  
V
quiescent  
Voltage below which the triggered TBU™ device will  
transition to normal operating state  
P650-Uxxx-WH  
P850-Uxxx-WH  
11  
14  
V
reset  
The P-U Series TBU™ devices are unidirectional; specifications are valid for input direction only. For the output direction, the TBU™ device is  
a resistor.  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
123456

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