Datasheet > P4KE8.2CAE3/TR

P4KE8.2CAE3/TR

更新时间： 2024-02-23 18:56:35

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管
页数	文件大小	规格书
4页	199K
描述
Trans Voltage Suppressor Diode, 400W, 7.02V V(RWM), Bidirectional, 1 Element, Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

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P4KE8.2CAE3/TR 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Datasheet Url：	https://4donline.ihs.com/images/VipMasterIC/IC/MSSD/MSSDS00176/MSSDS00176-1.pdf?hkey=EF798316E3902B6ED9A73243A3159BB0	Objectid：	2107369141
包装说明：	O-PALF-W2	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
compound_id：	181804623	风险等级：	5.3
最大击穿电压：	8.61 V	最小击穿电压：	7.79 V
击穿电压标称值：	8.2 V	外壳连接：	ISOLATED
最大钳位电压：	12.1 V	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-204AL	JESD-30 代码：	O-PALF-W2
JESD-609代码：	e3	湿度敏感等级：	1
最大非重复峰值反向功率耗散：	400 W	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	BIDIRECTIONAL
最大功率耗散：	1.13 W	认证状态：	Not Qualified
最大重复峰值反向电压：	7.02 V	子类别：	Transient Suppressors
表面贴装：	NO	技术：	AVALANCHE
端子面层：	MATTE TIN	端子形式：	WIRE
端子位置：	AXIAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

P4KE8.2CAE3/TR 数据手册

P4KE6.8 thru P4KE400CA, e3

400 Watt Transient Voltage Suppressor

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This 400 W Transient Voltage Suppressor (TVS) series is an economical

molded axial-leaded package to protect voltage-sensitive components from

destructive or partial degradation. They are available in both unidirectional

or bi-directional configurations as well as RoHS Compliant (annealed

matte-Tin finish) with an e3 suffix added to the part number. They have a

peak pulse power rating of 400 watts for a 10/1000 µs as depicted in

Figures 1 and 2. The nominal breakdown voltages (V_BR) in this series

extend from 6.8 to 400 volts. Microsemi also offers a broad spectrum of

additional TVSs to meet your needs.

DO-41

(DO-204AL)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Economical series for thru-hole mounting

•

Suppresses transients up to 400 watts @ 10/1000 μs

(see Figure 1)

Available in both unidirectional and bi-directional (add C

or CA suffix to part number for bidirectional)

•

Protects sensitive components such as IC’s, CMOS,

Bipolar, BiCMOS, ECL, DTL, T²L, etc.

•

Voltages from 6.8 to 400 V Breakdown (V_BR

)

•

Protection from switching transients & induced RF

Fast Response

Compliant to IEC61000-4-2 and IEC61000-4-4 for

ESD and EFT protection respectively

Optional 100% screening for avionics grade is

available by adding MA prefix to part number for added

100% temperature cycle -55^oC to +125^oC (10X) as well

as surge (3X) and 24 hours HTRB with post test V_Z&

I_R(in the operating direction for unidirectional or both

directions for bidirectional)

•

Secondary lightning protection per IEC61000-4-5

with 42 Ohms source impedance:

Class 1: P4KE5.0 to P4KE91A or CA

Class 2: P4KE5.0 to P4KE47A or CA

Class 3: P4KE5.0 to P4KE24A or CA

Class 4: P4KE5.0 to P4KE12A or CA

•

Options for screening in accordance with MIL-PRF-

19500 for JAN, JANTX, or JANTXV are available by

adding MQ, MX, or MV prefixes respectively to part

numbers

Secondary lightning protection per IEC61000-4-5

with 12 Ohms source impedance:

•

RoHS Compliant devices avaialbe by adding “e3” suffix

Class 1: P4KE5.0 to P4KE30A or CA

Class 2: P4KE5.0 to P4KE15A or CA

Surface mount equivalents available as SMAJP4KE6.8

to SMAJP4KE400CA

•

Moisture classification is Level 1 with no dry pack

required per IPC/JEDEC J-STD-020B

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Operating and Storage Temperature: -65°C to +150°C

Peak Pulse Power: 400 Watts at 10/1000 μs (see Figure

1, 2 and 3 for t_W, waveform and derating effects)

•

CASE: Void-free transfer molded thermosetting

epoxy body meeting UL94V-0

•

FINISH: Tin-Lead or RoHS Compliant annealed

matte-Tin plating readily solderable per MIL-STD-

750, method 2026

•

Impulse repetition rate (duty factor): 0.01%

Thermal Resistance: 50°C/W junction to leads @ 3/8

inch (10 mm) from body, or 110°C/W junction to ambient

when mounted on FR4 PC board with 4 mm²copper

pads (1oz) and track width 1 mm, length 25 mm

•

MARKING: Body marked with part number

POLARITY: Band denotes cathode. Bidirectional

not marked

•

WEIGHT: 0.3 grams (approximate)

•

Steady-State Power: 2.5 Watts @ T_L=25°C at 3/8 inch

(10 mm) from body, or 1.13 W at T_A= 25^ºC on FR4 PC

board described for thermal resistance

TAPE & REEL option: Standard per EIA-296 (add

“TR” suffix to part number)

•

Forward Voltage at 25°C: 3.5 V @ 30 A with 8.3 ms half-

•

See package dimensions on last page

sine wave (unidirectional only)

Solder temperatures: 260 °C for 10 s (maximum)

6-20-2007 REV D

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

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与P4KE8.2CAE3/TR相关器件

型号	品牌	描述	获取价格	数据表
P4KE8.2CAE3TR	MICROSEMI	400W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL, PLASTIC, DO-41, 2 PIN	获取价格
P4KE8.2CA-G	COMCHIP	400W Transient Voltage Suppressor	获取价格
P4KE8.2CAH02-1	RECTRON	Trans Voltage Suppressor Diode, Bidirectional, 1 Element, Silicon, DO-41	获取价格
P4KE8.2CAH03-1	RECTRON	Trans Voltage Suppressor Diode, Bidirectional, 1 Element, Silicon, DO-41	获取价格
P4KE8.2CAH03-4	RECTRON	Trans Voltage Suppressor Diode, Bidirectional, 1 Element, Silicon, DO-41	获取价格
P4KE8.2CAH04	RECTRON	Trans Voltage Suppressor Diode, Bidirectional, 1 Element, Silicon, DO-41	获取价格

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