Datasheet > P4KE8.2C-B

P4KE8.2C-B

更新时间： 2024-11-04 19:35:23

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网二极管电视
页数	文件大小	规格书
6页	974K
描述
TVS DIODE

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中文翻译

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技术参数
数据手册
替代型号

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P4KE8.2C-B 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN	Reach Compliance Code：	not_compliant
风险等级：	5.12	其他特性：	LOW IMPEDANCE
最大击穿电压：	9.02 V	最小击穿电压：	7.38 V
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-204AL	JESD-30 代码：	O-PALF-W2
JESD-609代码：	e3	湿度敏感等级：	2
最大非重复峰值反向功率耗散：	400 W	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	260	极性：	BIDIRECTIONAL
最大功率耗散：	1 W	认证状态：	Not Qualified
最大重复峰值反向电压：	7.02 V	表面贴装：	NO
技术：	AVALANCHE	端子面层：	Matte Tin (Sn)
端子形式：	WIRE	端子位置：	AXIAL
处于峰值回流温度下的最长时间：	30	Base Number Matches：	1

P4KE8.2C-B 数据手册

TransientVoltage Suppression Diodes

Axial Leaded – 400W > P4KE series

RoHS

P4KE Series

Description

The P4KE Series is designed speciﬁcally to protect

sensitive electronic equipment from voltage transients

induced by lightning and other transient voltage events.

Bi-directional

Uni-directional

Features

• V_BR@T_J= V_BR@25°C × (1+αT

x (T_J- 25))

• ESD protection of data

lines in accordance with

IEC 61000-4-2 (IEC801-2)

(αT:Temperature Coefﬁcient)

• EFT protection of data

lines in accordance with

IEC 61000-4-4 (IEC801-4)

• Low incremental surge

resistance

• Glass passivated chip

junction in DO-41 Package

• 400W peak pulse

capability at 10/1000μs

waveform, repetition rate

(duty cycles):0.01%

• Fast response time:

typically less than 1.0ps

from 0 Volts to BV min

Agency Approvals

AGENCY

AGENCY FILE NUMBER

E230531

• Typical I_Rless than 1μA

above 13V

• High temperature

soldering guaranteed:

260°C/40 seconds /

0.375”,(9.5mm) lead

length, 5 lbs., (2.3kg)

tension

• Plastic package has

underwriters laboratory

ﬂammability classiﬁcation

94V-O

Maximum Ratings andThermal Characteristics

(T_A=25°C unless otherwise noted)

• Excellent clamping

capability

Parameter

Symbol

P_PPM

Value

400

Unit

•Typical failure mode is

short from over-speciﬁed

voltage or current

• Whisker test is conducted

based on JEDEC

JESD201A per its table 4a

and 4c

• IEC-61000-4-2 ESD

Peak Pulse Power Dissipation by

10/1000μsTest Waveform (Fig.2)

(Note 1)

Steady State Power Dissipation on

Iniﬁnite Heat Sink atT_L=75ºC (Fig. 6)

P_D

1.5

• Matte tin lead–free plated

• Halogen free and RoHS

compliant

Peak Forward Surge Current, 8.3ms

Single Half Sine Wave Unidirectional

Only (Note 2)

Maximum Instantaneous Forward

Voltage at 25A for Unidirectional

Only (Note 3)

I_FSM

15kV(Air), 8kV (Contact)

V_F

3.5/5.0

Operating Junction and Storage

Temperature Range

Applications

T_J, T_STG-55 to 150

°C

TVS devices are ideal for the protection of I/O interfaces,

_CCbus and other vulnerable circuits used in telecom,

computer, industrial and consumer electronic applications.

TypicalThermal Resistance Junction

to Lead

R_uJL

R_uJA

°C/W

TypicalThermal Resistance Junction

to Ambient

100

Notes:

1. Non-repetitive current pulse , per Fig. 4 and derated aboveT_A= 25°C per Fig. 3.

2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per

minute maximum.

3. V_F<3.5V for devices of V_BR<_ 200V and V_F<5.0V for devices of V_BR>_ 201V.

Functional Diagram

Additional Information

Datasheet

Resources

Samples

Bi-directional

Cathode

Anode

Uni-directional

Speciﬁcations are subject to change without notice.

Revised: 01/24/14

12 3 4 5 6

中文翻译

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P4KE8.2C-B 替代型号

型号	品牌	替代类型	描述	数据表
P4KE8.2CA	LITTELFUSE	类似代替	Silicon Avalanche Diodes - 400W Axial Leaded Transient Voltage Supressors
P4KE8.2CA-E3/73	VISHAY	功能相似	TVS DIODE 7.02V 12.1V DO204AL

与P4KE8.2C-B相关器件

型号	品牌	获取价格	描述	数据表
P4KE8.2C-G	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 400W, 6.63V V(RWM), Bidirectional, 1 Element, Silicon, DO-
P4KE8.2C-G	COMCHIP	获取价格	400W Transient Voltage Suppressor
P4KE8.2C-GT3	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 400W, 6.63V V(RWM), Bidirectional, 1 Element, Silicon, DO-
P4KE8.2CH02	RECTRON	获取价格	Trans Voltage Suppressor Diode, Bidirectional, 1 Element, Silicon, DO-41
P4KE8.2CH02-1	RECTRON	获取价格	Trans Voltage Suppressor Diode, Bidirectional, 1 Element, Silicon, DO-41
P4KE8.2CH02-2	RECTRON	获取价格	Trans Voltage Suppressor Diode, Bidirectional, 1 Element, Silicon, DO-41
P4KE8.2CH02-3	RECTRON	获取价格	Trans Voltage Suppressor Diode, Bidirectional, 1 Element, Silicon, DO-41
P4KE8.2CH02-4	RECTRON	获取价格	Trans Voltage Suppressor Diode, Bidirectional, 1 Element, Silicon, DO-41
P4KE8.2CH02-5	RECTRON	获取价格	Trans Voltage Suppressor Diode, Bidirectional, 1 Element, Silicon, DO-41
P4KE8.2CH03-1	RECTRON	获取价格	Trans Voltage Suppressor Diode, Bidirectional, 1 Element, Silicon, DO-41

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