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P4KE180AT PDF预览

P4KE180AT

更新时间: 2024-11-01 13:12:07
品牌 Logo 应用领域
力特 - LITTELFUSE 二极管局域网
页数 文件大小 规格书
4页 187K
描述
Trans Voltage Suppressor Diode, 400W, 154V V(RWM), Unidirectional, 1 Element, Silicon, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN

P4KE180AT 技术参数

是否无铅:含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:DO-41
包装说明:O-PALF-W2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.09
Is Samacsys:N其他特性:LOW IMPEDANCE
最大击穿电压:189 V最小击穿电压:171 V
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-204ALJESD-30 代码:O-PALF-W2
JESD-609代码:e3湿度敏感等级:2
最大非重复峰值反向功率耗散:400 W元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大功率耗散:1 W认证状态:Not Qualified
最大重复峰值反向电压:154 V表面贴装:NO
技术:AVALANCHE端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

P4KE180AT 数据手册

 浏览型号P4KE180AT的Datasheet PDF文件第2页浏览型号P4KE180AT的Datasheet PDF文件第3页浏览型号P4KE180AT的Datasheet PDF文件第4页 
Silicon Avalanche Diodes  
400W Axial Leaded Transient Voltage Supressors  
®
RoHS  
P4KE Series  
FEATURES  
RoHS compliant  
Plastic package  
Glass passivated chip junction in DO-41 Package  
400W surge capability at 10/1000 µs wave form  
Excellent clamping capability  
Low zener impedance  
Fast response time: typically less than 1.0ps from 0 Volts  
to BV min.  
Typical IR less than 1µA above 10V  
(9.5mm) lead length, 5lbs., (2.3kg) tension  
Agency Approvals: Recognized under the Components Program  
of Underwriters Laboratories.  
MAXIMUM RATINGS AND CHARACTERISTICS  
@25˚C AMBIENT TEMPERATURE (unless otherw ise noted)  
Agency File Number: E128662  
ORDERING INFORMATION  
PARAMETER  
VALUE  
SYMBOL  
UNIT  
Peak Pulse Power Dissipation at  
Min  
400  
P
Watts  
PPM  
C A  
P4KE  
Voltage  
Bi-Directional  
T
T
A=25˚C, P=1ms (note 1)  
Steady State Power Dissipation at  
T =75˚C, Lead lenghts .375”,  
P
L
M(AV)  
Watts  
Amps  
1
(9.5mm)(note2)  
5% Voltage Tolerance  
Packaging Option  
Peak Forward Surge Current, 8.3ms  
Single Half SIne Wave Superimposed  
on Rated Load, (JEDEC Method)  
(note 3)  
I
40  
FSM  
B= Bulk (500 pcs)  
T= Tape and reeled (5000 pcs)  
T
T
°C  
Operating junction and Storage  
Temperature Range  
-55 to +175  
j, sTG  
Notes:  
1. Non-repetitive current pulse , per Fig. 3 and derated above  
T =25˚C per Fig 2.  
A
2. 8.3ms single half sine-wave , or equivalent square wave, Duty  
cycle = 4 pulses per minutes maximum.  
Mechanical Specifications:  
Weight:  
Case:  
0.012ounce, 0.3 gram  
JEDEC DO-41 Molded Plastic over  
passivated junction  
Mounting Position:  
Polarity:  
Any  
Color band denotes cathode except  
Bipolar  
Terminal:  
Plated Axial leads, solderable per  
MIL-STD-750, Method 2026  
282  
w w w. l i t t e l f u s e . c o m  

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