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P4KA7.5C

更新时间: 2024-01-30 19:46:42
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 86K
描述
Trans Voltage Suppressor Diode, 6.05V V(RWM), Bidirectional,

P4KA7.5C 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.84
击穿电压标称值:7.5 V最大钳位电压:11.3 V
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-609代码:e0
极性:BIDIRECTIONAL最大重复峰值反向电压:6.4 V
子类别:Transient Suppressors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

P4KA7.5C 数据手册

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P4KA6.8 thru P4KA43A  
Vishay General Semiconductor  
®
PAR Transient Voltage Suppressors  
High Temperature Stability and High Reliability Conditions  
FEATURES  
• Junction passivation optimized design  
passivated anisotropic rectifier technology  
• T = 185 °C capability suitable for high  
J
reliability and automotive requirement  
• Available in uni-directional polarity only  
DO-204AL (DO-41)  
• 400 W peak pulse power capability with a  
10/1000 µs waveform, repetitive rate (duty cycle):  
0.01 %  
• Excellent clamping capability  
• Very fast response time  
PRIMARY CHARACTERISTICS  
• Low incremental surge resistance  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• AEC-Q101 qualified  
VBR  
PPPM  
PD  
6.8 V to 43 V  
400 W  
1.5 W  
40 A  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
IFSM  
TJ max.  
185 °C  
MECHANICAL DATA  
Case: DO-204AL, molded epoxy over passivated  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and  
lighting on ICs, MOSFET, signal lines of sensor units  
for consumer, computer, industrial, automotive, and  
telecommunication.  
junction  
Molding compound meets UL 94 V-0 flammability  
rating  
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
HE3 suffix meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
PPPM  
IPPM  
VALUE  
UNIT  
W
Peak pulse power dissipation with a 10/1000 µs waveform (1) (fig. 1)  
Peak pulse current with a 10/1000 µs waveform (1) (fig. 3)  
Power dissipation on infinite heatsink at TL = 75 °C (fig. 5)  
Peak forward surge current 8.3 ms single half sine-wave (2)  
Maximum instantaneous forward voltage at 25 A  
Operating junction and storage temperature range  
400  
See next table  
1.5  
A
PD  
W
IFSM  
40  
A
VF  
3.5  
V
TJ, TSTG  
- 65 to + 185  
°C  
Notes  
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
(2) All terms and symbols are consistent with ANSI/IEEE C62.35  
Document Number: 88364  
Revision: 09-Feb-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

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