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P4KA7.5HE3/54 PDF预览

P4KA7.5HE3/54

更新时间： 2024-11-01 19:52:35
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管电视
页数 文件大小 规格书
5页 84K
描述
DIODE 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN, Transient Suppressor

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P4KA7.5HE3/54 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：DO-41
包装说明：O-PALF-W2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.23
其他特性：EXCELLENT CLAMPING CAPABILITY ,HIGH RELIABILITY最大击穿电压：8.25 V
最小击穿电压：6.75 V击穿电压标称值：7.5 V
外壳连接：ISOLATED最大钳位电压：11.7 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-204AL
JESD-30 代码：O-PALF-W2JESD-609代码：e3
最大非重复峰值反向功率耗散：400 W元件数量：1
端子数量：2最高工作温度：185 °C
最低工作温度：-65 °C封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED极性：UNIDIRECTIONAL
最大功率耗散：1.5 W认证状态：Not Qualified
最大重复峰值反向电压：6.05 V子类别：Transient Suppressors
表面贴装：NO技术：AVALANCHE
端子面层：Matte Tin (Sn)端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

P4KA7.5HE3/54 数据手册

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P4KA6.8 thru P4KA43A  
Vishay General Semiconductor  
www.vishay.com  
PAR® Transient Voltage Suppressors  
High Temperature Stability and High Reliability Conditions  
FEATURES  
• Junction passivation optimized design  
passivated anisotropic rectifier technology  
• TJ = 185 °C capability suitable for high  
reliability and automotive requirement  
• Available in uni-directional polarity only  
• 400 W peak pulse power capability with a  
10/1000 μs waveform, repetitive rate  
(duty cycle): 0.01 %  
DO-204AL (DO-41)  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• AEC-Q101 qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
VBR  
PPPM  
PD  
6.8 V to 43 V  
TYPICAL APPLICATIONS  
400 W  
1.5 W  
40 A  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, automotive, and telecommunication.  
IFSM  
TJ max.  
185 °C  
MECHANICAL DATA  
Case: DO-204AL, molded epoxy over passivated junction  
Molding compound meets UL 94 V-0 flammability rating  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
HE3 suffix meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
IPPM  
VALUE  
UNIT  
W
Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1)  
Peak pulse current with a 10/1000 μs waveform (1) (fig. 3)  
Power dissipation on infinite heatsink at TL = 75 °C (fig. 5)  
Peak forward surge current 8.3 ms single half sine-wave (2)  
Maximum instantaneous forward voltage at 25 A  
400  
See next table  
1.5  
A
PD  
W
IFSM  
40  
A
VF  
3.5  
V
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 185  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
All terms and symbols are consistent with ANSI/IEEE C62.35  
(2)  
Revision: 08-May-12  
Document Number: 88364  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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