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P4C164-15JI PDF预览

P4C164-15JI

更新时间: 2024-11-17 23:25:19
品牌 Logo 应用领域
其他 - ETC 静态存储器
页数 文件大小 规格书
8页 80K
描述
x8 SRAM

P4C164-15JI 数据手册

 浏览型号P4C164-15JI的Datasheet PDF文件第2页浏览型号P4C164-15JI的Datasheet PDF文件第3页浏览型号P4C164-15JI的Datasheet PDF文件第4页浏览型号P4C164-15JI的Datasheet PDF文件第5页浏览型号P4C164-15JI的Datasheet PDF文件第6页浏览型号P4C164-15JI的Datasheet PDF文件第7页 
P4C164/P4C164L  
ULTRA HIGH SPEED 8K x 8  
STATIC CMOS RAMS  
FEATURES  
Full CMOS, 6T Cell  
Output Enable and Dual Chip Enable Control  
Functions  
High Speed (Equal Access and Cycle Times)  
– 8/10/12/15/20/25 ns (Commercial)  
– 10/12/15/20/25/35 (Industrial)  
Single 5V±10% Power Supply  
Data Retention with 2.0V Supply, 10 µA Typical  
Current (P4C164L Military)  
– 12/15/20/25/35/45 ns (Military)  
Low Power Operation  
– 770mW Active –15  
Common Data I/O  
– 660/743 mW Active – 20  
Fully TTL Compatible Inputs and Outputs  
– 495/575 mW Active – 25, 35, 45  
– 193/220 mW Standby (TTL Input)  
– 5.5mW Standby (CMOS Input) P4C164L (Military)  
Standard Pinout (JEDEC Approved)  
– 28-Pin 300 mil DIP, SOJ  
– 28-Pin 600 mil Ceramic DIP  
– 28-Pin 350 x 550 mil LCC  
– 28-Pin CERPACK  
DESCRIPTION  
The P4C164 and P4C164L are 65,536-bit ultra high-speed  
static RAMs organized as 8K x 8. The CMOS memories  
require no clocks or refreshing and have equal access and  
cycle times. Inputs are fully TTL-compatible. The RAMs  
operate from a single 5V±10% tolerance power supply.  
With battery backup, data integrity is maintained with  
supply voltages down to 2.0V. Current drain is typically 10  
µA from a 2.0V supply.  
Access times as fast as 10 nanoseconds are available,  
permitting greatly enhanced system operating speeds. In  
full standby mode with CMOS inputs, power consumption  
is only 5.5 mW for the P4C164L.  
The P4C164 and P4C164L are available in 28-pin 300 mil  
DIP and SOJ, 28-pin 600 mil ceramic DIP, and 28-pin 350  
x 550 mil LCC packages providing excellent board level  
densities.  
FUNCTIONAL BLOCK DIAGRAM  
PIN CONFIGURATIONS  
NC  
V
CC  
1
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
A0  
A
0
2
WE  
CE  
3
27  
26  
65,536-BIT  
ROW  
A
1
NC  
4
5
6
7
8
9
CE  
A
3
MEMORY  
SELECT  
ARRAY  
2
2
28  
2
A
2
A
3
4
1
25  
24  
23  
22  
21  
20  
19  
18  
A
A
A
12  
12  
A7  
A
3
A
4
A
A
5
11  
10  
11  
10  
A
4
A
5
6
A
5
A
6
7
OE  
I/O1  
OE  
A
6
8
A
9
A
7
A
9
INPUT  
DATA  
COLUMN I/O  
A
7
9
A
8
10  
11  
12  
CE  
CE  
1
1
CONTROL  
A
8
10  
11  
12  
13  
14  
I/O  
I/O  
I/O  
I/O  
I/O  
8
8
7
I/O8  
1
2
I/O  
14 15 16  
1
I/O  
7
I/O  
13  
17  
2
I/O  
I/O  
I/O  
6
5
4
I/O  
3
COLUMN  
SELECT  
GND  
CE1  
CE2  
DIP (P5, D5-2, D5-1), SOJ (J5)
CERPACK (F4) SIMILAR  
TOP VIEW  
LCC (L5)  
TOP VIEW  
WE  
• • • • • •  
A8  
A12  
OE  
Means Quality, Service and Speed  
1Q97  
91  

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