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P4C164-15P6MLF PDF预览

P4C164-15P6MLF

更新时间: 2024-10-27 21:17:03
品牌 Logo 应用领域
PYRAMID 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
16页 1239K
描述
Standard SRAM, 8KX8, 15ns, CMOS, PDIP28, 0.600 INCH, ROHS COMPLIANT, PLASTIC, DIP-28

P4C164-15P6MLF 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:DIP包装说明:DIP,
针数:28Reach Compliance Code:compliant
ECCN代码:3A001.A.2.CHTS代码:8542.32.00.41
风险等级:5最长访问时间:15 ns
JESD-30 代码:R-PDIP-T28长度:36.322 mm
内存密度:65536 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:28字数:8192 words
字数代码:8000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:8KX8封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED座面最大高度:5.08 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:MILITARY
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:15.24 mmBase Number Matches:1

P4C164-15P6MLF 数据手册

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P4C164  
ULTRA HIGH SPEED 8K X 8  
STATIC CMOS RAMS  
FEATURES  
Full CMOS, 6T Cell  
Common Data I/O  
High Speed (Equal Access and Cycle Times)  
– 8/10/12/15/20/25/35/70/100 ns (Commercial)  
– 10/12/15/20/25/35/70/100 ns(Industrial)  
– 12/15/20/25/35/45/70/100 ns (Military)  
Fully TTL Compatible Inputs and Outputs  
Standard Pinout (JEDEC Approved)  
– 28-Pin 300 mil Plastic DIP, SOJ  
– 28-Pin 600 mil Plastic DIP  
Low Power Operation  
– 28-Pin 300 mil SOP (70 & 100ns)  
– 28-Pin 300 mil Ceramic DIP  
– 28-Pin 600 mil Ceramic DIP  
– 28-Pin 350 x 550 mil LCC  
Output Enable and Dual Chip Enable Control  
Functions  
– 32-Pin 450 x 550 mil LCC  
– 28-Pin Glass-sealed CERPACK  
– 28-Pin Solder-sealed CERPACK  
Single 5V±10% Power Supply  
Data Retention with 2.0V Supply, 10 µA Typical  
Current (P4C164L Only)  
DESCRIPTIOꢀ  
The P4C164 is a 65,536-bit ultra high-speed static RAM  
organized as 8K x 8. The CMOS memory requires no  
clocksorrefreshingandhasequalaccessandcycletimes.  
Inputs are fully TTL-compatible. The RAM operates from  
a single 5V±10% tolerance power supply. With battery  
backup (P4C164L Only), data integrity is maintained with  
supply voltages down to 2.0V. Current drain is typically 10  
µA from a 2.0V supply.  
Access times as fast as 8 nanoseconds are available,  
permitting greatly enhanced system operating speeds.  
The P4C164 is available in 28-pin 300 mil DIP and SOJ,  
28-pin600milplasticandceramicDIP,28-pin350x550mil  
LCC, 32-pin 450 x 550 mil LCC, and 28-pin glass-sealed  
CERPACK and solder-sealed flatpack.  
FUꢀCTIOꢀAL BLOCK DIAGRAM  
PIꢀ COꢀFIGURATIOꢀS  
DIP (P5, P6, C5, C5-1, D5-1, D5-2),  
SOJ (J5), CERPACK (F4), SOLDER-SEAL FLATPACK (FS-5), SOP (S6)  
SEE PAGE 8 FOR LCC PIN CONFIGURATIONS  
Document # SRAM115 REV H  
Revised April 2011  

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