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P4C164-15P6MBLF PDF预览

P4C164-15P6MBLF

更新时间: 2024-10-27 20:49:39
品牌 Logo 应用领域
PYRAMID 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
16页 1095K
描述
Standard SRAM, 8KX8, 15ns, CMOS, PDIP28, 0.600 INCH, ROHS COMPLIANT, PLASTIC, DIP-28

P4C164-15P6MBLF 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:DIP包装说明:DIP,
针数:28Reach Compliance Code:compliant
ECCN代码:3A001.A.2.CHTS代码:8542.32.00.41
风险等级:5最长访问时间:15 ns
JESD-30 代码:R-PDIP-T28JESD-609代码:e3
长度:36.322 mm内存密度:65536 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端子数量:28
字数:8192 words字数代码:8000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:8KX8
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified筛选级别:MIL-STD-883
座面最大高度:5.08 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:MILITARY端子面层:MATTE TIN
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:15.24 mmBase Number Matches:1

P4C164-15P6MBLF 数据手册

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P4C164  
ULTRA HIGH SPEED 8K X 8  
STATIC CMOS RAMS  
FEATURES  
Full CMOS, 6T Cell  
Common Data I/O  
High Speed (Equal Access and Cycle Times)  
– 8/10/12/15/20/25/35/70/100 ns (Commercial)  
– 10/12/15/20/25/35/70/100 ns(Industrial)  
– 12/15/20/25/35/45/70/100 ns (Military)  
Fully TTL Compatible Inputs and Outputs  
Standard Pinout (JEDEC Approved)  
– 28-Pin 300 mil Plastic DIP, SOJ  
– 28-Pin 600 mil Plastic DIP  
– 28-Pin 300 mil SOP (70 & 100ns)  
– 28-Pin 300 mil Ceramic DIP  
– 28-Pin 600 mil Ceramic DIP  
– 28-Pin 350 x 550 mil LCC  
– 32-Pin 450 x 550 mil LCC  
– 28-Pin CERPACK  
Low Power Operation  
Output Enable and Dual Chip Enable Control  
Functions  
Single 5V±10% Power Supply  
Data Retention with 2.0V Supply, 10 µA Typical  
Current (P4C164L Military)  
DESCRIPTIOꢀ  
The P4C164 is a 65,536-bit ultra high-speed static RAM  
organizedas8Kx8.TheCMOSmemoryrequiresnoclocks  
orrefreshingandhasequalaccessandcycletimes. Inputs  
are fullyTTL-compatible. The RAM operates from a single  
5V±10%tolerancepowersupply. Withbatterybackup,data  
integrity is maintained with supply voltages down to 2.0V.  
Current drain is typically 10 µA from a 2.0V supply.  
Access times as fast as 8 nanoseconds are available,  
permitting greatly enhanced system operating speeds.  
The P4C164 is available in 28-pin 300 mil DIP and SOJ,  
28-pin600milplasticandceramicDIP,28-pin350x550mil  
LCC, 32-pin 450 x 550 mil LCC, and 28-pin CERPACK.  
FUꢀCTIOꢀAL BLOCK DIAꢁRAM  
PIꢀ COꢀFIꢁURATIOꢀS  
DIP (P5, P6, C5, C5-1, D5-1, D5-2),  
SOJ (J5), CERPACK (F4), SOP (S6)  
SEE PAGE 8 FOR LCC PIN CONFIGURATIONS  
Document # SRAM115 REV G  
Revised September 2010  

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