Datasheet > P3503EVG

P3503EVG

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
其他 - ETC		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	141K
描述
P-Channel Logic Level Enhancement Mode Field Effect Transistor

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P3503EVG 数据手册

P3503EVG

SOP-8

NIKO-SEM

P-Channel Logic Level Enhancement

Lead-Free

Mode Field Effect Transistor

PRODUCT SUMMARY

:GATE

V_(BR)DSS

-30

R_DS(ON)

I_D

5,6,7,8 :DRAIN

1,2,3 :SOURCE

35mΩ

-8A

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

LIMITS

UNITS

V_DS

V_GS

-30

±20

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current¹

Power Dissipation

T_C= 25 °C

T_C= 70 °C

-8

I_D

-7

I_DM

P_D

-30

T_C= 25 °C

T_C= 70 °C

2.5

1.3

Operating Junction & Storage Temperature Range

T, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

R_qJ

TYPICAL

MAXIMUM

UNITS

Junction-to-Case

°C / W

Junction-to-Ambient

R_qJA

¹Pulse width limited by maximum junction temperature.

²Duty cycle £ 1%

ELECTRICAL CHARACTERISTICS (T_C= 25 °C, Unless Otherwise Noted)

LIMITS

PARAMETER

SYMBOL

TEST CONDITIONS

STATIC

UNIT

MIN TYP MAX

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

V_(BR)DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= -250mA

V_DS= V_GS, I_D= -250mA

-30

-0.8 -1.5 -2.5

V_DS= 0V, V_GS= ±20V

±100 nA

V_DS= -24V, V_GS= 0V

-1

Zero Gate Voltage Drain Current

I_DSS

V_DS= -20V, V_GS= 0V, T_J= 125 °C

-10

On-State Drain Current¹

I_D(ON)

R_DS(ON)

g_fs

V_DS= -5V, V_GS= -10V

V_GS= -4.5V, I_D= -6A

V_GS= -10V, I_D= -8A

V_DS= -10V, I_D= -6A

-30

mΩ

Drain-Source On-State Resistance¹

Forward Transconductance¹

Jan-06-2005

12 3 4 5

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