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P3506ET PDF预览

P3506ET

更新时间: 2024-11-20 17:15:35
品牌 Logo 应用领域
尼克森微 - NIKOSEM /
页数 文件大小 规格书
4页 199K
描述
TO-220

P3506ET 数据手册

 浏览型号P3506ET的Datasheet PDF文件第2页浏览型号P3506ET的Datasheet PDF文件第3页浏览型号P3506ET的Datasheet PDF文件第4页 
P-Channel Enhancement Mode  
Field Effect Transistor  
P3506ET  
TO-220  
Halogen-Free & Lead-Free  
NIKO-SEM  
PRODUCT SUMMARY  
D
V(BR)DSS  
-60V  
RDS(ON)  
ID  
-36A  
35mΩ  
1. GATE  
2. DRAIN  
3. SOURCE  
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
Drain-Source Voltage  
SYMBOL  
VDS  
LIMITS  
-60  
UNITS  
V
V
Gate-Source Voltage  
VGS  
±25  
TC = 25 °C  
-36  
Continuous Drain Current2  
ID  
TC = 100 °C  
-23  
A
Pulsed Drain Current1  
Avalanche Current  
Avalanche Energy  
Power Dissipation  
IDM  
IAS  
-86  
-28  
L = 0.1mH  
TC = 25 °C  
TC = 100 °C  
EAS  
39  
mJ  
W
87  
PD  
35  
Junction & Storage Temperature Range  
TJ, Tstg  
-55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
SYMBOL  
RJC  
TYPICAL  
MAXIMUM  
UNITS  
°C / W  
Junction-to-Case  
1.43  
62.5  
Junction-to-Ambient  
RJA  
1Pulse width limited by maximum junction temperature.  
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)  
LIMITS  
MIN TYP MAX  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
STATIC  
UNIT  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
Gate-Body Leakage  
V(BR)DSS  
VGS(th)  
IGSS  
-60  
VGS = 0V, ID = -250A  
VDS = VGS, ID = -250A  
VDS = 0V, VGS = ±25V  
V
-1.3 -1.8 -2.3  
±100 nA  
REV1.0  
I-35-2  
1

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