Datasheet > P28F010-150

P28F010-150

更新时间： 2024-11-07 22:44:43

品牌	Logo	应用领域
英特尔 - INTEL		/
页数	文件大小	规格书
30页	407K
描述
1024K (128K x 8) CMOS FLASH MEMORY

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数据手册
替代型号

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P28F010-150 数据手册

28F010

1024K (128K x 8) CMOS FLASH MEMORY

Flash Electrical Chip-Erase

Ð 1 Second Typical Chip-Erase

Command Register Architecture for

Microprocessor/Microcontroller

Compatible Write Interface

Quick Pulse Programming Algorithm

Ð 10 ms Typical Byte-Program

Ð 2 Second Chip-Program

Noise Immunity Features

Ð Maximum Latch-Up Immunity

10% V

Tolerance

100,000 Erase/Program Cycles

through EPI Processing

12.0V 5% V

ETOX^TMNonvolatile Flash Technology

Ð EPROM-Compatible Process Base

Ð High-Volume Manufacturing

Experience

High-Performance Read

Ð 65 ns Maximum Access Time

CMOS Low Power Consumption

Ð 10 mA Typical Active Current

Ð 50 mA Typical Standby Current

Ð 0 Watts Data Retention Power

JEDEC-Standard Pinouts

Ð 32-Pin Plastic Dip

Ð 32-Lead PLCC

Ð 32-Lead TSOP

(See Packaging Spec., Order 231369)

Integrated Program/Erase Stop Timer

Extended Temperature Options

Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write

random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar

EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on-

board during subassembly test; in-system during final test; and in-system after-sale. The 28F010 increases

memory flexibility, while contributing to time and cost savings.

The 28F010 is a 1024 kilobit nonvolatile memory organized as 131,072 bytes of 8 bits. Intel’s 28F010 is

offered in 32-pin plastic dip or 32-lead PLCC and TSOP packages. Pin assignments conform to JEDEC

standards for byte-wide EPROMs.

Extended erase and program cycling capability is designed into Intel’s ETOX (EPROM Tunnel Oxide) process

technology. Advanced oxide processing, an optimized tunneling structure, and lower electric field combine to

extend reliable cycling beyond that of traditional EEPROMs. With the 12.0V V supply, the 28F010 performs

100,000 erase and program cycles well within the time limits of the Quick Pulse Programming and Quick Erase

algorithms.

Intel’s 28F010 employs advanced CMOS circuitry for systems requiring high-performance access speeds, low

power consumption, and immunity to noise. Its 65 nanosecond access time provides no-WAIT-state perform-

ance for a wide range of microprocessors and microcontrollers. Maximum standby current of 100 mA trans-

lates into power savings when the device is deselected. Finally, the highest degree of latch-up protection is

achieved through Intel’s unique EPI processing. Prevention of latch-up is provided for stresses up to 100 mA

on address and data pins, from 1V to V

1V.

With Intel’s ETOX process base, the 28F010 builds on years of EPROM experience to yield the highest levels

of quality, reliability, and cost-effectiveness.

*Other brands and names are the property of their respective owners.

Information in this document is provided in connection with Intel products. Intel assumes no liability whatsoever, including infringement of any patent or

copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for such products. Intel retains the right to make

changes to these specifications at any time, without notice. Microcomputer Products may have minor variations to this specification known as errata.

November 1995

Order Number: 290207-010

12 3 4 5 6 7...30

中文翻译

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P28F010-150 替代型号

型号	品牌	替代类型	描述	数据表
TP28F010-150	INTEL	功能相似	28F010 1024K (128K X 8) CMOS FLASH MEMORY

与P28F010-150相关器件

型号	品牌	获取价格	描述	数据表
P28F010-200	ETC	获取价格	x8 Flash EEPROM
P28F010-200SB48	INTEL	获取价格	Flash Memory
P28F010-65	INTEL	获取价格	1024K (128K x 8) CMOS FLASH MEMORY
P28F010-90	INTEL	获取价格	1024K (128K x 8) CMOS FLASH MEMORY
P28F020-120	INTEL	获取价格	28F020 2048K (256K X 8) CMOS FLASH MEMORY
P28F020-150	INTEL	获取价格	28F020 2048K (256K X 8) CMOS FLASH MEMORY
P28F020-70	INTEL	获取价格	Flash, 256KX8, 80ns, PDIP32, 0.620 X 1.640 INCH, PLASTIC, DIP-32
P28F020-90	INTEL	获取价格	28F020 2048K (256K X 8) CMOS FLASH MEMORY
P28F256A-120	ETC	获取价格	x8 Flash EEPROM
P28F256A-150	ETC	获取价格	x8 Flash EEPROM

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