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TP28F010-150

更新时间： 2024-09-19 22:42:03

品牌	Logo	应用领域
英特尔 - INTEL		闪存存储内存集成电路光电二极管
页数	文件大小	规格书
33页	894K
描述
28F010 1024K (128K X 8) CMOS FLASH MEMORY

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中文翻译

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技术参数
数据手册
替代型号

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TP28F010-150 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	DIP	包装说明：	0.620 X 1.640 INCH, PLASTIC, DIP-32
针数：	32	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8542.32.00.51
风险等级：	5.51	Is Samacsys：	N
最长访问时间：	150 ns	命令用户界面：	YES
数据轮询：	NO	耐久性：	100000 Write/Erase Cycles
JESD-30 代码：	R-PDIP-T32	JESD-609代码：	e0
长度：	41.91 mm	内存密度：	1048576 bit
内存集成电路类型：	FLASH	内存宽度：	8
功能数量：	1	端子数量：	32
字数：	131072 words	字数代码：	128000
工作模式：	ASYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	128KX8
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	DIP	封装等效代码：	DIP32,.6
封装形状：	RECTANGULAR	封装形式：	IN-LINE
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	NOT SPECIFIED
电源：	5 V	编程电压：	12 V
认证状态：	Not Qualified	座面最大高度：	4.83 mm
最大待机电流：	0.0001 A	子类别：	Flash Memories
最大压摆率：	0.03 mA	最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	4.5 V	标称供电电压 (Vsup)：	5 V
表面贴装：	NO	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	THROUGH-HOLE	端子节距：	2.54 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
切换位：	NO	类型：	NOR TYPE
宽度：	15.24 mm	Base Number Matches：	1

TP28F010-150 数据手册

28F010 1024K (128K X 8) CMOS

FLASH MEMORY

Flash Electrical Chip-Erase

Command Register Architecture for

Microprocessor/Microcontroller

Compatible Write Interface

1 Second Typical Chip-Erase

Quick-Pulse Programming Algorithm

10 µs Typical Byte-Program

2 Second Chip-Program

Noise Immunity Features

±10% V_CCTolerance

Maximum Latch-Up Immunity

through EPI Processing

100,000 Erase/Program Cycles

12.0 V ±5% V_PP

ETOX™ Nonvolatile Flash Technology

EPROM-Compatible Process Base

High-Volume Manufacturing

Experience

High-Performance Read

90 ns Maximum Access Time

CMOS Low Power Consumption

10 mA Typical Active Current

50 µA Typical Standby Current

0 Watts Data Retention Power

JEDEC-Standard Pinouts

32-Pin Plastic Dip

32-Lead PLCC

32-Lead TSOP

(See Packaging Spec., Order #231369)

Integrated Program/Erase Stop Timer

Extended Temperature Options

Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write

random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar

EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on-

board during subassembly test; in-system during final test; and in-system after sale. The 28F010 increases

memory flexibility, while contributing to time and cost savings.

The 28F010 is a 1024 kilobit nonvolatile memory organized as 131,072 bytes of eight bits. Intel’s 28F010 is

offered in 32-pin plastic dip or 32-lead PLCC and TSOP packages. Pin assignments conform to JEDEC

standards for byte-wide EPROMs.

Extended erase and program cycling capability is designed into Intel's ETOX™ (EPROM Tunnel Oxide)

process technology. Advanced oxide processing, an optimized tunneling structure, and lower electric field

combine to extend reliable cycling beyond that of traditional EEPROMs. With the 12.0 V V_PPsupply, the

28F010 performs 100,000 erase and program cycles—well within the time limits of the quick-pulse

programming and quick-erase algorithms.

Intel's 28F010 employs advanced CMOS circuitry for systems requiring high-performance access speeds,

low power consumption, and immunity to noise. Its 90 ns access time provides zero wait-state performance

for a wide range of microprocessors and microcontrollers. Maximum standby current of 100 µA translates into

power savings when the device is deselected. Finally, the highest degree of latch-up protection is achieved

through Intel's unique EPI processing. Prevention of latch-up is provided for stresses up to 100 mA on

address and data pins, from –1 V to V_CC+ 1 V.

With Intel's ETOX process technology base, the 28F010 builds on years of EPROM experience to yield the

highest levels of quality, reliability, and cost-effectiveness.

December 1997

Order Number: 290207-012

12 3 4 5 6 7...33

中文翻译

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TP28F010-150 替代型号

型号	品牌	替代类型	描述	数据表
P28F010-150	INTEL	功能相似	1024K (128K x 8) CMOS FLASH MEMORY
M28F101-150P1	STMICROELECTRONICS	功能相似	1 Mb 128K x 8, Chip Erase FLASH MEMORY

与TP28F010-150相关器件

型号	品牌	获取价格	描述	数据表
TP28F010-90	INTEL	获取价格	28F010 1024K (128K X 8) CMOS FLASH MEMORY
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TP2906	ALLEGRO	获取价格	Transistor,
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TP2906A	VISHAY	获取价格	Transistor,
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TP2907A	ALLEGRO	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
TP2907A	VISHAY	获取价格	Transistor

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