5秒后页面跳转
P095RH10CG0 PDF预览

P095RH10CG0

更新时间: 2024-09-22 07:26:15
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
2页 208K
描述
Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,1KV V(DRM),175A I(T),TO-208VAR1/2

P095RH10CG0 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84Is Samacsys:N
标称电路换相断开时间:35 µs关态电压最小值的临界上升速率:20 V/us
最大直流栅极触发电流:200 mA最大直流栅极触发电压:3 V
最大维持电流:600 mA最大漏电流:20 mA
通态非重复峰值电流:1800 A最大通态电流:175000 A
最高工作温度:125 °C最低工作温度:-40 °C
断态重复峰值电压:1000 V子类别:Silicon Controlled Rectifiers
表面贴装:NO触发设备类型:SCR
Base Number Matches:1

P095RH10CG0 数据手册

 浏览型号P095RH10CG0的Datasheet PDF文件第2页 

与P095RH10CG0相关器件

型号 品牌 获取价格 描述 数据表
P095RH10CGO IXYS

获取价格

Silicon Controlled Rectifier, 175A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element
P095RH10CH IXYS

获取价格

Silicon Controlled Rectifier, 175A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element
P095RH10CH0 IXYS

获取价格

Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,1KV V(DRM),175A I(T),TO-208VAR1
P095RH10CHO IXYS

获取价格

Silicon Controlled Rectifier, 175A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element
P095RH10D2KO IXYS

获取价格

Silicon Controlled Rectifier, 175A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element
P095RH10DG0 IXYS

获取价格

Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,1KV V(DRM),175A I(T),TO-208VAR1
P095RH10DHO IXYS

获取价格

Silicon Controlled Rectifier, 175 A, 1000 V, SCR
P095RH10DJ IXYS

获取价格

Silicon Controlled Rectifier, 175A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element
P095RH10DJ0 IXYS

获取价格

Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,1KV V(DRM),175A I(T),TO-208VAR1
P095RH10EG IXYS

获取价格

Silicon Controlled Rectifier, 175 A, 1000 V, SCR