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P095RH08DH0 PDF预览

P095RH08DH0

更新时间: 2024-11-10 14:35:11
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
2页 212K
描述
Silicon Controlled Rectifier, 175000mA I(T), 800V V(DRM)

P095RH08DH0 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84Is Samacsys:N
标称电路换相断开时间:30 µs关态电压最小值的临界上升速率:50 V/us
最大直流栅极触发电流:200 mA最大直流栅极触发电压:3 V
最大维持电流:600 mA最大漏电流:20 mA
通态非重复峰值电流:1800 A最大通态电流:175000 A
最高工作温度:125 °C最低工作温度:-40 °C
断态重复峰值电压:800 V子类别:Silicon Controlled Rectifiers
表面贴装:NO触发设备类型:SCR
Base Number Matches:1

P095RH08DH0 数据手册

 浏览型号P095RH08DH0的Datasheet PDF文件第2页 

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P095RH08DHO IXYS

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Silicon Controlled Rectifier, 175A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element
P095RH08E2K IXYS

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Silicon Controlled Rectifier, 175A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element
P095RH08E2KO IXYS

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Silicon Controlled Rectifier, 175A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element
P095RH08EG IXYS

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Silicon Controlled Rectifier, 175A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element
P095RH08EG0 IXYS

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Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,800V V(DRM),175A I(T),TO-208VAR
P095RH08EGO IXYS

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Silicon Controlled Rectifier, 175A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element
P095RH08EH IXYS

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Silicon Controlled Rectifier, 175A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element
P095RH08EH0 IXYS

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Silicon Controlled Rectifier, 175000mA I(T), 800V V(DRM)
P095RH08EJ0 IXYS

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Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,800V V(DRM),175A I(T),TO-208VAR
P095RH08F2K IXYS

获取价格

Silicon Controlled Rectifier, 175 A, 800 V, SCR