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P0311SC10G PDF预览

P0311SC10G

更新时间： 2024-11-29 20:52:59
品牌 Logo 应用领域
IXYS 栅栅极
页数 文件大小 规格书
25页 2795K
描述
Silicon Controlled Rectifier, 355A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element

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中文翻译

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P0311SC10G 技术参数

生命周期：Obsolete包装说明：POST/STUD MOUNT, O-MUPM-H3
Reach Compliance Code：unknownHTS代码：8541.30.00.80
风险等级：5.82配置：SINGLE
最大直流栅极触发电流：200 mAJESD-30 代码：O-MUPM-H3
元件数量：1端子数量：3
封装主体材料：METAL封装形状：ROUND
封装形式：POST/STUD MOUNT认证状态：Not Qualified
最大均方根通态电流：355 A断态重复峰值电压：1000 V
重复峰值反向电压：1000 V表面贴装：NO
端子形式：HIGH CURRENT CABLE端子位置：UPPER
触发设备类型：SCRBase Number Matches：1

P0311SC10G 数据手册

 浏览型号P0311SC10G的Datasheet PDF文件第2页浏览型号P0311SC10G的Datasheet PDF文件第3页浏览型号P0311SC10G的Datasheet PDF文件第4页浏览型号P0311SC10G的Datasheet PDF文件第5页浏览型号P0311SC10G的Datasheet PDF文件第6页浏览型号P0311SC10G的Datasheet PDF文件第7页 
Fast Turn-off Thyristor Stud  
P0311S/R◆10# to P0311S/R◆12#  
The data sheet on the subsequent pages of this document is a scanned copy of existing  
data for this product.  
(Rating Report 79TR14 Issue 2)  
This data reflects the old part number for this product which is: P205PH08-12. This part  
number must NOT be used for ordering purposes – please use the ordering particulars  
detailed below.  
The limitations of this data are as follows:  
This device is only available for grades 10 & 12 (1000V & 1200V VRRM/VDRM  
)
Please use the following link to view an up to date outline drawing for this device  
Outline W18  
Where any information on the product matrix page differs from that in the following data,  
the product matrix must be considered correct  
An electronic data sheet for this product is presently in preparation.  
For further information on this product, please contact your local ASM or distributor.  
Alternatively, please contact Westcode as detailed below.  
Ordering Particulars  
P0311  
S◆  
ꢀꢀ  
#
Outline Code  
Fixed Type Code SC = ¾” Ceramic stud with lead  
SG = ¾” Ceramic stud with lug  
Voltage code  
Turn-off time code  
E=25µs, F=30µs,  
G=35µs  
V
DRM/100  
10-12  
Typical Order Code: P0311SC12F, ¾” Ceramic stud, 1200V VDRM/VRRM, 30µs tq  
IXYS Semiconductor GmbH  
Edisonstraße 15  
D-68623 Lampertheim  
Tel: +49 6206 503-0  
Fax: +49 6206 503-627  
E-mail: marcom@ixys.de  
Westcode Semiconductors Ltd  
Langley Park Way, Langley Park,  
Chippenham, Wiltshire, SN15 1GE.  
Tel: +44 (0)1249 444524  
Fax: +44 (0)1249 659448  
E-mail: WSL.sales@westcode.com  
WESTCODE  
An IXYS Company  
IXYS Corporation  
3540 Bassett Street  
Santa Clara CA 95054 USA  
Tel: +1 (408) 982 0700  
Fax: +1 (408) 496 0670  
E-mail: sales@ixys.net  
Westcode Semiconductors Inc  
3270 Cherry Avenue  
Long Beach CA 90807 USA  
Tel: +1 (562) 595 6971  
Fax: +1 (562) 595 8182  
E-mail: WSI.sales@westcode.com  
www.westcode.com  
www.ixys.com  
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written  
permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.  
© Westcode Semiconductors Ltd.  
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.  
Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions  
and limits contained in this report.  
1234567...25

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与P0311SC10G相关器件

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P0311SC12G LITTELFUSE

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 		Silicon Controlled Rectifier, 355A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element
P0311SD10E LITTELFUSE

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 		Silicon Controlled Rectifier,
P0311SD10F LITTELFUSE

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 		Silicon Controlled Rectifier,
P0311SD10G LITTELFUSE

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 		Silicon Controlled Rectifier,
P0311SD12E LITTELFUSE

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 		Silicon Controlled Rectifier,
P0311SD12F LITTELFUSE

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 		Silicon Controlled Rectifier,
P0311SD12G LITTELFUSE

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 		Silicon Controlled Rectifier,
P0311SG10E IXYS

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 		Silicon Controlled Rectifier, 355A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element
P0311SG10F IXYS

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 		Silicon Controlled Rectifier, 355 A, 1000 V, SCR
P0311SG12E IXYS

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 		Silicon Controlled Rectifier, 355A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element

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