Datasheet > P0306BT

P0306BT

更新时间： 2024-11-10 17:15:27

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	302K
描述
TO-220

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中文翻译

获取价格

数据手册

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P0306BT 数据手册

N-Channel Logic Level Enhancement

Mode Field Effect Transistor

P0306BT

NIKO-SEM

TO-220

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

60V

R_DS(ON)

I_D

1.GATE

2.DRAIN

3.SOURCE

3.4mΩ

162A

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Gate-Source Voltage

SYMBOL

LIMITS

±20

UNITS

V_GS

T_C= 25 °C

162

Continuous Drain Current^2,3

I_D

T_C= 100 °C

102

Pulsed Drain Current^1,2

Avalanche Current

Avalanche Energy

I_DM

I_AS

300

119

L = 0.1mH

T_C= 25 °C

T_C= 100 °C

E_AS

708

178

Power Dissipation

P_D

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Case

SYMBOL

TYPICAL

MAXIMUM

UNITS

0.7

°C / W

R_JC

R_JA

Junction-to-Ambient

62.5

¹Pulse width limited by maximum junction temperature.

²Limited only by maximum temperature allowed.

³Package limitation current is 110A.

ELECTRICAL CHARACTERISTICS (T_J= 25 °C, Unless Otherwise Noted)

LIMITS

UNIT

PARAMETER

SYMBOL

TEST CONDITIONS

STATIC

MIN TYP MAX

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

V_(BR)DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250A

V_DS= V_GS, I_D= 250A

1.3

1.8

2.3

V_DS= 0V, V_GS= ±20V

±100 nA

V_DS= 48V, V_GS= 0V

A

Zero Gate Voltage Drain Current

I_DSS

V_DS= 40V, V_GS= 0V, T_J= 125 °C

E-25-4

REV 1.0

12 3 4

中文翻译

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