生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 标称电路换相断开时间: | 35 µs |
关态电压最小值的临界上升速率: | 20 V/us | 最大直流栅极触发电流: | 100 mA |
最大直流栅极触发电压: | 3 V | 最大维持电流: | 400 mA |
最大漏电流: | 10 mA | 通态非重复峰值电流: | 350 A |
最大通态电流: | 100000 A | 断态重复峰值电压: | 200 V |
子类别: | Silicon Controlled Rectifiers | 表面贴装: | NO |
触发设备类型: | SCR | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
P027RH02CH | IXYS |
获取价格 |
Silicon Controlled Rectifier, 100 A, 200 V, SCR, TO-65 | |
P027RH02CH0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,200V V(DRM),100A I(T),TO-208AC | |
P027RH02CJ | IXYS |
获取价格 |
Silicon Controlled Rectifier, 100000mA I(T), 200V V(DRM) | |
P027RH02CKO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 100A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element | |
P027RH02CL | IXYS |
获取价格 |
Silicon Controlled Rectifier, 100A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-65 | |
P027RH02CL0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 100000mA I(T), 200V V(DRM) | |
P027RH02CLO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 100A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element | |
P027RH02CMO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 100 A, 200 V, SCR | |
P027RH02CN | IXYS |
获取价格 |
Silicon Controlled Rectifier, 100A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-65 | |
P027RH02CN0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,200V V(DRM),100A I(T),TO-208AC |