生命周期: | Obsolete | 包装说明: | POST/STUD MOUNT, O-MUPM-H3 |
Reach Compliance Code: | unknown | HTS代码: | 8541.30.00.80 |
风险等级: | 5.84 | 其他特性: | HIGH RELIABILITY |
配置: | SINGLE | 最大直流栅极触发电流: | 100 mA |
JESD-30 代码: | O-MUPM-H3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | POST/STUD MOUNT |
认证状态: | Not Qualified | 最大均方根通态电流: | 100 A |
断态重复峰值电压: | 1200 V | 重复峰值反向电压: | 1200 V |
表面贴装: | NO | 端子形式: | HIGH CURRENT CABLE |
端子位置: | UPPER | 触发设备类型: | SCR |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
P027PH12EHO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 100A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element | |
P027PH12FG | IXYS |
获取价格 |
Silicon Controlled Rectifier, 100 A, 1200 V, SCR | |
P027PH12FGO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 100 A, 1200 V, SCR | |
P027PH12FH | IXYS |
获取价格 |
Silicon Controlled Rectifier, 100 A, 1200 V, SCR | |
P027RH02CG | IXYS |
获取价格 |
Silicon Controlled Rectifier, 100A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-65 | |
P027RH02CG0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 100000mA I(T), 200V V(DRM) | |
P027RH02CH | IXYS |
获取价格 |
Silicon Controlled Rectifier, 100 A, 200 V, SCR, TO-65 | |
P027RH02CH0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,200V V(DRM),100A I(T),TO-208AC | |
P027RH02CJ | IXYS |
获取价格 |
Silicon Controlled Rectifier, 100000mA I(T), 200V V(DRM) | |
P027RH02CKO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 100A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element |