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ON1004

更新时间: 2024-09-18 10:22:51
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
4页 97K
描述
Transmissive Photosensors (Photo lnterrupters) For contactless SW, object detection

ON1004 数据手册

 浏览型号ON1004的Datasheet PDF文件第2页浏览型号ON1004的Datasheet PDF文件第3页浏览型号ON1004的Datasheet PDF文件第4页 
Transmissive Photosensors (Photo lnterrupters)  
CNA1302K (ON1004)  
Photo lnterrupter  
Unit: mm  
For contactless SW, object detection  
A
Slit width  
(0.3)  
Overview  
CNA1302K is an ultraminiature, highly reliable transmissive  
photosensor in which a high efficiency GaAs infrared light emitting  
diode chip and a high sensitivity Si phototransistor chip are integrated  
in a double molded resin package.  
A'  
5.0  
SEC. A-A'  
4.2  
1.5  
2.0  
1.5  
Device  
center  
(C0.5)  
Gate the rest  
0.3 max.  
(C0.3)  
Features  
+0.1  
-0  
φ1.5  
2-0.5  
2-0.25  
*3.8  
Ultraminiature: 4.2 mm × 5.0 mm (height: 5.2 mm)  
Fast response: tr , tf = 35 µs (typ.)  
Highly precise position detection: 0.15 mm  
Gap width: 2.0 mm  
*2.54  
1: Anode  
1
2
3
4
2: Cathode  
3: Collector  
4: Emitter  
Absolute Maximum Ratings Ta = 25°C  
PISMR104-003 Package  
(Note) 1. Tolerance unless otherwise specified is 0.2  
2. ( ) Dimension is reference  
Parameter  
Input (Light Reverse voltage  
emitting diode) Forward current  
Power dissipation *  
Symbol Rating  
Unit  
V
VR  
IF  
6
3. is dimension at the root of leads  
*
4. Burrs should be less than 0.15 mm  
50  
75  
35  
mA  
mW  
V
1
PD  
Output (Photo Collector-emitter voltage VCEO  
transistor)  
(Base open)  
Emitter-collector voltage VECO  
(Base open)  
6
V
Collector current  
Collector power dissipation *  
IC  
20  
75  
mA  
mW  
°C  
Note) 1: Input power derating ratio is 1.0 mW/°C at  
*
2
PC  
Ta 25°C.  
Temperature Operating ambient temperature Topr  
Storage temperature  
25 to +85  
2: Output power derating ratio is 1.0 mW/°C at  
Ta 25°C.  
*
Tstg 40 to +100  
°C  
Electrical-Optical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
VF  
Conditions  
Min  
Typ  
Max  
1.4  
Unit  
V
Input  
Forward voltage  
IF = 20 mA  
VR = 3 V  
VCE = 20 V  
1.2  
characteristics Reverse current  
IR  
10  
µA  
nA  
100  
Output  
Collector-emitter cutoff current ICEO  
(Base open)  
characteristics  
Transfer  
Collector current  
IC  
VCE = 5 V, IF = 5 mA  
100  
400  
0.4  
µA  
V
characteristics  
Collector-emitter saturation voltage VCE(sat) IF = 10 mA, IC = 40 µA  
Rise time *  
Fall time *  
tr  
tf  
VCC = 5 V, IC = 0.1 mA  
RL = 1000 Ω  
35  
35  
µs  
µs  
Note) 1. Input and output are practiced by electricity.  
2. This device is designed be disregarded radiation.  
3. : Switching time measurement circuit  
*
Sig. in  
VCC  
tr : Rise time  
tf : Fall time  
(Input pulse)  
90%  
10%  
(Output pulse)  
Sig. out  
RL  
tr  
tf  
50  
Note) The part number in the parenthesis shows conventional part number.  
Publication date: April 2004  
SHG00022BED  
1

ON1004 替代型号

型号 品牌 替代类型 描述 数据表
CNA1302K PANASONIC

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Transmissive Photosensors (Photo lnterrupters) For contactless SW, object detection

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