Transmissive Photosensors (Photo lnterrupters)
CNA1302K (ON1004)
Photo lnterrupter
Unit: mm
For contactless SW, object detection
A
Slit width
(0.3)
■ Overview
CNA1302K is an ultraminiature, highly reliable transmissive
photosensor in which a high efficiency GaAs infrared light emitting
diode chip and a high sensitivity Si phototransistor chip are integrated
in a double molded resin package.
A'
5.0
SEC. A-A'
4.2
1.5
2.0
1.5
Device
center
(C0.5)
Gate the rest
0.3 max.
(C0.3)
■ Features
+0.1
-0
φ1.5
2-0.5
2-0.25
*3.8
• Ultraminiature: 4.2 mm × 5.0 mm (height: 5.2 mm)
• Fast response: tr , tf = 35 µs (typ.)
• Highly precise position detection: 0.15 mm
• Gap width: 2.0 mm
*2.54
1: Anode
1
2
3
4
2: Cathode
3: Collector
4: Emitter
■ Absolute Maximum Ratings Ta = 25°C
PISMR104-003 Package
(Note) 1. Tolerance unless otherwise specified is 0.2
2. ( ) Dimension is reference
Parameter
Input (Light Reverse voltage
emitting diode) Forward current
Power dissipation *
Symbol Rating
Unit
V
VR
IF
6
3. is dimension at the root of leads
*
4. Burrs should be less than 0.15 mm
50
75
35
mA
mW
V
1
PD
Output (Photo Collector-emitter voltage VCEO
transistor)
(Base open)
Emitter-collector voltage VECO
(Base open)
6
V
Collector current
Collector power dissipation *
IC
20
75
mA
mW
°C
Note) 1: Input power derating ratio is 1.0 mW/°C at
*
2
PC
Ta ≥ 25°C.
Temperature Operating ambient temperature Topr
Storage temperature
−25 to +85
2: Output power derating ratio is 1.0 mW/°C at
Ta ≥ 25°C.
*
Tstg −40 to +100
°C
■ Electrical-Optical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VF
Conditions
Min
Typ
Max
1.4
Unit
V
Input
Forward voltage
IF = 20 mA
VR = 3 V
VCE = 20 V
1.2
characteristics Reverse current
IR
10
µA
nA
100
Output
Collector-emitter cutoff current ICEO
(Base open)
characteristics
Transfer
Collector current
IC
VCE = 5 V, IF = 5 mA
100
400
0.4
µA
V
characteristics
Collector-emitter saturation voltage VCE(sat) IF = 10 mA, IC = 40 µA
Rise time *
Fall time *
tr
tf
VCC = 5 V, IC = 0.1 mA
RL = 1000 Ω
35
35
µs
µs
Note) 1. Input and output are practiced by electricity.
2. This device is designed be disregarded radiation.
3. : Switching time measurement circuit
*
Sig. in
VCC
tr : Rise time
tf : Fall time
(Input pulse)
90%
10%
(Output pulse)
Sig. out
RL
tr
tf
50Ω
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SHG00022BED
1