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NX8563LAS597-CD-A

更新时间： 2024-11-08 14:30:39
品牌 Logo 应用领域
瑞萨 - RENESAS 监视器光电半导体
页数 文件大小 规格书
5页 320K
描述
LASER DIODE W/MONITOR,1.56UM PEAK WAVELENGTH,MODULE-BF

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NX8563LAS597-CD-A 技术参数

是否Rohs认证： 符合生命周期：Obsolete
Reach Compliance Code：unknown风险等级：5.84
最大正向电流：0.3 A最大正向电压：2 V
最高工作温度：85 °C最低工作温度：-20 °C
光电设备类型：LASER DIODE峰值波长：1560 nm
最长响应时间：1.2e-10 s半导体材料：InGaAsP
子类别：Laser DiodesBase Number Matches：1

NX8563LAS597-CD-A 数据手册

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DATA SHEET  
NEC's DIRECTLY MODULATED  
InGaAsP MQW-DFB  
LASER DIODE MODULE  
FOR 2.5 GB/s, 110 KM AND 240 KM REACH  
DWDM METRO AND CATV APPLICATIONS  
NX8563LA  
Series  
FEATURES  
DESCRIPTION  
NEC's NX8563LA Series is a 1 550 nm Multiple Quantum  
Well (MQW) structured Distributed Feed-Back (DFB) laser  
diode module with Single Mode Fiber.  
•
•
•
PEAK OUTPUT POWER  
Pf = 10 mW MIN.  
INTERNAL THERMO-ELECTRIC COOLER AND  
ISOLATOR  
It is designed as directly modulation light source and  
ideal for optical transmission systems. The device is  
available for Dense Wavelength Division Multiplexing  
(DWDM) wavelengths based on ITU-T recommendations,  
enabling a wide range of applications.  
HERMETICALLY SEALED 14-PIN BUTTERFLY  
PACKAGE  
•
•
•
SINGLE MODE FIBER PIGTAIL  
WIDE OPERATION TEMPERATURE RANGE  
AVAILABLE FOR DWDM WAVELENGTHS BASED ON  
ITU-T RECOMMENDATIONS  
ELECTRO-OPTICAL CHARACTERISTICS (TLD = TSET, TC = -20 + 85°C)  
SYMBOL  
PARAMETER AND CONDITIONS  
UNIT  
MIN  
TYP  
MAX  
Tset  
VF  
Laser Set Temperature  
°C  
V
30  
45  
2.0  
40  
Forward Voltage, Pf = 10 mW  
0.9  
Ith  
Threshold Current  
mA  
mW  
mA  
μW  
W/A  
nm  
20  
Pf  
Optical Output Power from Fiber, IF = Iop, TLD = Tset  
Operation Current  
10  
Iop  
125  
100  
Pth  
Threshold Output Power, IF = Ith  
η
Quantum Efficiency, CW  
0.142  
1 530  
0.17  
ITU-T*1  
1
λp  
Peak Emission Wavelength, Pf = 10 mW, CW, TLD = Tset  
Spectral Line Width, Pf = 10 mW, CW, 3 dB down  
Side Mode Suppression Ratio, Pf = 10 mW, under modulation  
Input Impedance  
1 562  
5
Δν  
MHz  
dB  
SMSR  
ZIN  
RIN  
tr /tf  
30  
35  
Ω
25  
Relative Intensity Noise, Pf = 10 mW, 20 MHz to 3 GHz  
dB/Hz  
ps  
−140  
Rise and Fall Time, 20-80%/80-20%, Tc = 25°C  
Input Return Loss, f = 50 MHz to 3 GHz  
f = 3 GHz to 6 GHz  
120  
6
3
S11  
dB  
BW  
DP  
Band Width, −3 dB, Pf = 10 mW  
Dispersion Penalty, Tc = 25°C*2  
GHz  
dB  
2.5  
2.0  
Notes:  
*1 Available for DWDM wavelengths based on ITU-T recommendation. Please refer to the ORDERING INFORMATION.  
*2 2.48832 Gb/s, PRBS 223−1, duty cycle, Extinction Ratio ≥ 8.5 dB, BER = 10−10, NX8563LAS: 1 800 ps/nm(100 km),  
NX8563LA: 4 320 ps/nm(240 km)  
California Eastern Laboratories  
12345

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NX8563LAS614-CD CEL

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 		NECs DIRECTLY MODULATED InGaAsP MQW-DFB LASER DIODE MODULE FOR 2.5 GB/s, 110 KM AND 240 KM
NX8563LAS614-CD NEC

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 		Laser Diode Module Emitter, 1530nm Min, 1562nm Max, SC/APC Connector, Butterfly, Panel Mou
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