生命周期: | Obsolete | Reach Compliance Code: | unknown |
风险等级: | 5.84 | 最大正向电流: | 0.15 A |
最大正向电压: | 2 V | 最高工作温度: | 70 °C |
最低工作温度: | -5 °C | 光电设备类型: | LASER DIODE |
峰值波长: | 1560 nm | 最长响应时间: | 4e-11 s |
半导体材料: | GaAs | 子类别: | Laser Diodes |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NX8560SJ610-BC | RENESAS |
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LASER DIODE W/MONITOR,1.561UM PEAK WAVELENGTH,MODULE-BFVAR | |
NX8560SJ614-CC | RENESAS |
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LASER DIODE W/MONITOR,1.561UM PEAK WAVELENGTH,MODULE-BFVAR | |
NX8561JC | NEC |
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InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION | |
NX8561JC | RENESAS |
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FIBER OPTIC DFB LASER MODULE EMITTER, 1505-1515nm, THROUGH HOLE MOUNT, DIP, HERMETICALLY S | |
NX8561JC-CA | RENESAS |
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FIBER OPTIC DFB LASER MODULE EMITTER, 1505-1515nm, THROUGH HOLE MOUNT, DIP, SC/PC CONNECTO | |
NX8561JD | NEC |
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1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE | |
NX8562 | CEL |
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NECs CW InGaAsP MQW DFB LASER DIODE MODULE FOR DWDM APPLICATION (20 mW MIN) | |
NX8562-AZ | CEL |
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NECs CW InGaAsP MQW DFB LASER DIODE MODULE FOR DWDM APPLICATION (20 mW MIN) | |
NX8562LB | NEC |
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1 550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE | |
NX8562LB279 | ETC |
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Optoelectronic |