生命周期: | Obsolete | 包装说明: | DIP |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
Is Samacsys: | N | 主体宽度: | 21.84 mm |
主体高度: | 12.16 mm | 主体长度或直径: | 25.4 mm |
内置特性: | TEC, THERMISTOR | 最长下降时间: | 0.5 ns |
光纤设备类型: | DFB LASER MODULE EMITTER | 光纤类型: | 9/125, SMF |
安装特点: | THROUGH HOLE MOUNT | 最大工作波长: | 1515 nm |
最小工作波长: | 1505 nm | 标称工作波长: | 1510 nm |
封装形式: | DIP | 上升时间: | 0.5 ns |
电源电流: | 80 mA | 表面贴装: | NO |
最小阈值电流: | 20 mA | 传输类型: | DIGITAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NX8561JC-CA | RENESAS |
获取价格 |
FIBER OPTIC DFB LASER MODULE EMITTER, 1505-1515nm, THROUGH HOLE MOUNT, DIP, SC/PC CONNECTO | |
NX8561JD | NEC |
获取价格 |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE | |
NX8562 | CEL |
获取价格 |
NECs CW InGaAsP MQW DFB LASER DIODE MODULE FOR DWDM APPLICATION (20 mW MIN) | |
NX8562-AZ | CEL |
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NECs CW InGaAsP MQW DFB LASER DIODE MODULE FOR DWDM APPLICATION (20 mW MIN) | |
NX8562LB | NEC |
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1 550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE | |
NX8562LB279 | ETC |
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Optoelectronic | |
NX8562LB279-BA | RENESAS |
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LASER DIODE W/MONITOR,1.528UM PEAK WAVELENGTH,MODULE-BFVAR | |
NX8562LB279-BA | CEL |
获取价格 |
NECs CW InGaAsP MQW DFB LASER DIODE MODULE FOR DWDM APPLICATION (20 mW MIN) | |
NX8562LB279-CA | RENESAS |
获取价格 |
LASER DIODE W/MONITOR,1.528UM PEAK WAVELENGTH,MODULE-BFVAR | |
NX8562LB287 | RENESAS |
获取价格 |
LASER DIODE W/MONITOR,1.529UM PEAK WAVELENGTH,MODULE-BFVAR |