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NX3DV221TK PDF预览

NX3DV221TK

更新时间: 2024-02-10 10:19:03
品牌 Logo 应用领域
恩智浦 - NXP 光电二极管
页数 文件大小 规格书
19页 1089K
描述
IC DIFFERENTIAL MULTIPLEXER, Multiplexer or Switch

NX3DV221TK 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:HVSON-10Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.24
模拟集成电路 - 其他类型:DIFFERENTIAL MULTIPLEXERJESD-30 代码:S-PDSO-N10
长度:3 mm信道数量:2
功能数量:1端子数量:10
标称断态隔离度:38 dB通态电阻匹配规范:0.1 Ω
最大通态电阻 (Ron):7 Ω最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:HVSON封装形状:SQUARE
封装形式:SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE座面最大高度:1 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.3 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
最长断开时间:23 ns最长接通时间:50 ns
温度等级:INDUSTRIAL端子形式:NO LEAD
端子节距:0.5 mm端子位置:DUAL
宽度:3 mmBase Number Matches:1

NX3DV221TK 数据手册

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NX3DV221  
High-speed USB 2.0 switch with enable  
Rev. 4 — 19 June 2013  
Product data sheet  
1. General description  
The NX3DV221 is a high-bandwidth switch designed for the switching of high-speed USB  
2.0 signals in handset and consumer applications. These applications could be cell  
phones, digital cameras, and notebooks with hubs or controllers with limited USB I/Os.  
The wide bandwidth (1 GHz) of this switch allows signal to pass with minimum edge and  
phase distortion. The device multiplexes differential outputs from a USB host device to  
one of two corresponding outputs. The switch is bidirectional and offers little or no  
attenuation of the high-speed signals at the outputs. It is designed for low bit-to-bit skew  
and high channel-to-channel noise isolation, and is compatible with various standards,  
such as high-speed USB 2.0 (480 Mbps).  
2. Features and benefits  
Wide supply voltage range from 2.3 V to 3.6 V  
Switch voltage accepts signals up to 5.5 V  
1.8 V control logic at VCC = 3.6 V  
Low-power mode when OE is HIGH (2 A maximum)  
6 (maximum) ON resistance  
0.1 (typical) ON resistance mismatch between channels  
6 pF (typical) ON-state capacitance  
High bandwidth (1.0 GHz typical)  
Latch-up performance exceeds 100 mA per JESD 78B Class II Level A  
ESD protection:  
HBM JESD22-A114F Class 3A exceeds 8000 V  
CDM JESD22-C101E exceeds 1000 V  
HBM exceeds 12000 V for I/O to GND protection  
Specified from 40 C to +85 C  
3. Applications  
Routes signals for USB 1.0, 1.1 and 2.0  
 
 
 

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