Datasheet > NX138BKH

NX138BKH

更新时间： 2024-11-29 11:12:47

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	281K
描述
60 V, N-channel Trench MOSFETProduction

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NX138BKH 数据手册

NX138BKH

60 V, N-channel Trench MOSFET

6 February 2023

Product data sheet

1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3

(SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits

•

Low threshold voltage

•

Very fast switching

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 2 kV HBM

Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm

3. Applications

•

Relay driver

High-speed line driver

Low-side loadswitch

Switching circuits

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

V_GS

-20

I_D

V_GS= 10 V; T_amb= 25 °C

[1]

380

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 380 mA; T_j= 25 °C

1.8

2.3

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm².

12 3 4 5 6 7...14

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