Datasheet > NX138BKS

NX138BKS

更新时间： 2023-09-03 20:38:52

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
15页	754K
描述
60 V, dual N-channel Trench MOSFETProduction

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NX138BKS 数据手册

NX138BKS

60 V, dual N-channel Trench MOSFET

15 June 2016

Product data sheet

1. General description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88)

Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits

•

Low threshold voltage

•

Very fast switching

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 2 kV HBM

3. Applications

•

Relay driver

High-speed line driver

Low-side loadswitch

Switching circuits

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

-20

V_GS= 10 V; T_amb= 25 °C

V_GS= 10 V; I_D= 200 mA; T_j= 25 °C

[1]

210

Static characteristics (per transistor)

R_DSon

drain-source on-state

resistance

2.1

3.5

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm².

12 3 4 5 6 7...15

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