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NVS4001NT1G

更新时间： 2024-11-07 11:01:35

品牌	Logo	应用领域
安森美 - ONSEMI		小信号场效应晶体管
页数	文件大小	规格书
6页	49K
描述
单 N 沟道小信号 MOSFET，30V，270mA，1.5Ω

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NVS4001NT1G 数据手册

NTS4001N

Small Signal MOSFET

30 V, 270 mA, Single N−Channel, SC−70

Features

• Low Gate Charge for Fast Switching

• Small Footprint − 30% Smaller than TSOP−6

• ESD Protected Gate

http://onsemi.com

TYP

I Max

(BR)DSS

DS(on)

• Pb−Free Package for Green Manufacturing (G Suffix)

1.0 W @ 4.0 V

1.5 W @ 2.5 V

Applications

270 mA

30 V

• Low Side Load Switch

• Li−Ion Battery Supplied Devices − Cell Phones, PDAs, DSC

• Buck Converters

• Level Shifts

SC−70

SOT−323 (3 LEADS)

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Gate

Parameter

Drain−to−Source Voltage

Symbol

Value Units

DSS

Drain

Gate−to−Source Voltage

±20

270

200

330

Continuous Drain

Current (Note 1)

Steady T = 25 °C

State

Source

T = 85 °C

Power Dissipation

(Note 1)

Steady T = 25 °C

State

Top View

Pulsed Drain Current

t =10 µs

200

MARKING DIAGRAM

Operating Junction and Storage Temperature

T , T

−55 to

150

°C

STG

Source Current (Body Diode)

270

260

TDW

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

°C

SC−70 / SOT−323

CASE 419

1. Surface mounted on FR4 board using 1 in sq. pad size

(Cu area = 1.127 in sq. [1 oz] including traces).

= Device Code

= Work Week

STYLE 8

PIN ASSIGNMENT

Gate

Drain

Source

Top View

ORDERING INFORMATION

Device

Package

Shipping

NTS4001NT1

SC−70

3000 Units/Reel

SC−70

(Pb−Free)

NTS4001NT1G

Semiconductor Components Industries, LLC, 2003

Publication Order Number:

September, 2003 − Rev. 1

NTS4001N/D

12 3 4 5 6

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