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NVD4804N

更新时间： 2024-09-25 01:17:59
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 92K
描述
Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK

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NVD4804N 数据手册

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NTD4804N, NVD4804N  
Power MOSFET  
30 V, 117 A, Single N−Channel, DPAK/IPAK  
Features  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Capacitance to Minimize Driver Losses  
• Optimized Gate Charge to Minimize Switching Losses  
• AEC Q101 Qualified − NVD4804N  
http://onsemi.com  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
• These Devices are Pb−Free and are RoHS Compliant  
4.0 mW @ 10 V  
5.5 mW @ 4.5 V  
30 V  
117 A  
Applications  
• CPU Power Delivery  
• DC−DC Converters  
• Low Side Switching  
D
N−Channel  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
G
Parameter  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
Symbol  
Value  
30  
Unit  
V
V
DSS  
S
V
GS  
"20  
19.6  
15.2  
2.66  
V
4
Continuous Drain  
I
D
A
T = 25°C  
A
Current (R ) (Note 1)  
q
JA  
T = 85°C  
A
4
Power Dissipation  
(R ) (Note 1)  
T = 25°C  
A
P
D
W
A
q
JA  
2
1
1
2
3
3
Continuous Drain  
I
D
T = 25°C  
A
14.5  
11  
Current (R ) (Note 2)  
q
JA  
T = 85°C  
A
CASE 369AD  
3 IPAK  
(Straight Lead)  
CASE 369AA  
DPAK  
(Bent Lead)  
STYLE 2  
CASE 369D  
IPAK  
(Straight Lead  
DPAK)  
Steady  
State  
Power Dissipation  
(R ) (Note 2)  
T = 25°C  
A
P
I
1.43  
W
A
D
q
JA  
Continuous Drain  
T
C
T
C
T
C
= 25°C  
= 85°C  
= 25°C  
124  
96  
D
Current (R  
(Note 1)  
)
q
JC  
MARKING DIAGRAMS  
& PIN ASSIGNMENTS  
Power Dissipation  
(R ) (Note 1)  
P
D
107  
W
4
4
Drain  
q
JC  
4
Drain  
Drain  
Pulsed Drain Current  
t =10ms T = 25°C  
I
DM  
230  
45  
A
A
p
A
Current Limited by Package  
T = 25°C  
A
I
DmaxPkg  
Operating Junction and Storage Temperature  
T , T  
−55 to  
175  
°C  
J
stg  
Source Current (Body Diode)  
Drain to Source dV/dt  
I
78  
6.0  
450  
A
S
2
Drain  
dV/dt  
V/ns  
mJ  
1
3
1
2
3
Gate Source  
Gate Drain Source  
1
2
3
Single Pulse Drain−to−Source Avalanche  
E
AS  
Gate Drain Source  
Energy (V = 24 V, V = 10 V,  
DD  
GS  
A
Y
WW  
= Assembly Location  
= Year  
= Work Week  
L = 1.0 mH, I  
= 30 A, R = 25 W)  
L(pk)  
G
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
4804N = Device Code  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
G
= Pb−Free Package  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
© Semiconductor Components Industries, LLC, 2014  
1
Publication Order Number:  
May, 2014 − Rev. 9  
NTD4804N/D  
12345678

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