Datasheet > NVD2955

NVD2955

更新时间： 2024-09-24 12:05:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	124K
描述
â60 V, â12 A, PâChannel DPAK

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NVD2955 数据手册

NTD2955, NTD2955P,

NVD2955

Power MOSFET

−60 V, −12 A, P−Channel DPAK

This Power MOSFET is designed to withstand high energy in the

avalanche and commutation modes. Designed for low−voltage, high−

speed switching applications in power supplies, converters, and power

motor controls. These devices are particularly well suited for bridge

circuits where diode speed and commutating safe operating areas are

critical and offer an additional safety margin against unexpected

voltage transients.

http://onsemi.com

TYP

I MAX

(BR)DSS

DS(on)

−60 V

155 mW @ −10 V, 6 A

−12 A

P−Channel

Features

• Avalanche Energy Specified

• I

and V

Specified at Elevated Temperature

DSS

DS(on)

• Designed for Low−Voltage, High−Speed Switching Applications and

to Withstand High Energy in the Avalanche and Commutation Modes

• NVD Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

MARKING DIAGRAMS

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain

Drain−to−Source Voltage

DSS

−60

Vdc

DPAK

CASE 369C

STYLE 2

Gate−to−Source Voltage

− Continuous

GSM

Vdc

Vpk

− Non−repetitive (t ≤ 10 ms)

Drain Current

Drain Current − Continuous @ T = 25°C

Drain Current − Single Pulse (t ≤ 10 ms)

−12

−18

Adc

Apk

Gate

Drain

Source

Total Power Dissipation @ T = 25°C

Operating and Storage Temperature

Range

T , T

−55 to

175

°C

stg

Drain

Single Pulse Drain−to−Source Avalanche

216

Energy − Starting T = 25°C

(V = 25 Vdc, V = 10 Vdc, Peak

I = 12 Apk, L = 3.0 mH, R = 25 W)

Thermal Resistance

2.73

71.4

100

°C/W

°C

− Junction−to−Case

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

DPAK−3

CASE 369D

STYLE 2

Gate Drain Source

Maximum Lead Temperature for Soldering

Purposes, 1/8 in. from case for

10 seconds

260

= Year

WW = Work Week

= Pb−Free Package

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

1. When surface mounted to an FR4 board using 1 in pad size

(Cu area = 1.127 in ).

2. When surface mounted to an FR4 board using the minimum recommended

pad size (Cu area = 0.412 in ).

Publication Order Number:

October, 2012 − Rev. 12

NTD2955/D

12 3 4 5 6 7 8

中文翻译

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与NVD2955相关器件

型号	品牌	获取价格	描述	数据表
NVD2955T4G	ONSEMI	获取价格	â60 V, â12 A, PâChannel DPAK
NVD3055-094	ONSEMI	获取价格	Power MOSFET 12 A, 60 V, NâChannel DPAK / I
NVD3055-094T4G	ONSEMI	获取价格	Power MOSFET 12 A, 60 V, NâChannel DPAK / I
NVD3055-094T4G-VF01	ONSEMI	获取价格	N 沟道，功率 MOSFET，60V，12A，94mΩ
NVD3055-150T4G	ONSEMI	获取价格	功率 MOSFET，60V，9A，150mΩ，单 N 沟道，DPAK
NVD3055-150T4G-VF01	ONSEMI	获取价格	功率 MOSFET，60V，9A，150mΩ，单 N 沟道，DPAK
NVD3055L170	ONSEMI	获取价格	Power MOSFET
NVD3055L170T4G	ONSEMI	获取价格	Power MOSFET
NVD3055L170T4G-VF01	ONSEMI	获取价格	N 沟道，功率 MOSFET，逻辑电平，60V，9A，170mΩ
NVD360N65S3	ONSEMI	获取价格	Single N-Channel Power MOSFET SUPERFET® III,

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