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NTR1P02LT3G PDF预览

NTR1P02LT3G

更新时间: 2024-11-24 22:24:51
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号场效应晶体管开关光电二极管PC
页数 文件大小 规格书
6页 50K
描述
Power MOSFET

NTR1P02LT3G 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:11 weeks风险等级:0.71
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:226852Samacsys Pin Count:3
Samacsys Part Category:TransistorSamacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:SOT-23 (TO-236) CASE 318-08Samacsys Released Date:2015-08-31 09:03:17
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):1.3 A
最大漏极电流 (ID):1.3 A最大漏源导通电阻:0.22 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-236
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):0.4 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

NTR1P02LT3G 数据手册

 浏览型号NTR1P02LT3G的Datasheet PDF文件第2页浏览型号NTR1P02LT3G的Datasheet PDF文件第3页浏览型号NTR1P02LT3G的Datasheet PDF文件第4页浏览型号NTR1P02LT3G的Datasheet PDF文件第5页浏览型号NTR1P02LT3G的Datasheet PDF文件第6页 
NTR1P02LT1  
Power MOSFET  
−20 V, −1.3 A, P−Channel  
SOT−23 Package  
These miniature surface mount MOSFETs low R  
assure  
DS(on)  
minimal power loss and conserve energy, making these devices ideal  
for use in space sensitive power management circuitry. Typical  
applications are dc−dc converters and power management in portable  
and battery−powered products such as computers, printers, PCMCIA  
cards, cellular and cordless telephones.  
http://onsemi.com  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
−20 V  
220 mW  
−1.3 A  
Features  
P−Channel  
Low R  
Provides Higher Efficiency and Extends Battery Life  
DS(on)  
D
Miniature SOT−23 Surface Mount Package Saves Board Space  
Pb−Free Package is Available  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
G
Rating  
Drain−to−Source Voltage  
Gate−to−Source Voltage − Continuous  
Drain Current  
Symbol  
Value  
−20  
Unit  
V
V
DSS  
S
V
GS  
±12  
V
I
−1.3  
−4.0  
A
A
− Continuous @ T = 25°C  
D
MARKING DIAGRAM/  
PIN ASSIGNMENT  
A
I
DM  
− Pulsed Drain Current (t 10 ms)  
p
3
Total Power Dissipation @ T = 25°C  
P
400  
mW  
A
D
3
Drain  
Operating and Storage Temperature Range  
T , T  
J
− 55 to  
150  
°C  
stg  
1
2
Thermal Resistance − Junction−to−Ambient  
R
300  
260  
°C/W  
°C  
q
PO2W  
JA  
SOT−23  
Maximum Lead Temperature for Soldering  
T
L
CASE 318  
STYLE 21  
Purposes, (1/8from case for 10 s)  
1
2
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
Gate  
Source  
PO2 = Specific Device Code  
= Work Week  
W
ORDERING INFORMATION  
Device  
Package  
Shipping  
NTR1P02LT1  
SOT−23  
3000 Tape & Reel  
3000 Tape & Reel  
NTR1P02LT1G  
SOT−23  
(Pb−Free)  
NTR1P02LT3  
SOT−23  
10,000 Tape & Reel  
10,000 Tape & Reel  
NTR1P02LT3G  
SOT−23  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
July, 2004 − Rev. 5  
NTR1P02LT1/D  

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