Datasheet > NTR1P02T3G

NTR1P02T3G

更新时间： 2024-09-22 01:17:27

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	91K
描述
Power MOSFET

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中文翻译

获取价格

数据手册
替代型号

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NTR1P02T3G 数据手册

NTR1P02, NVR1P02

Power MOSFET

−20 V, −1 A, P−Channel SOT−23 Package

Features

• Ultra Low On−Resistance Provides Higher Efficiency

and Extends Battery Life

www.onsemi.com

= 0.180 W, V = −10 V

DS(on)

= 0.280 W, V = −4.5 V

TYP

I MAX

(BR)DSS

DS(on)

• Power Management in Portable and Battery−Powered Products

• Miniature SOT−23 Surface Mount Package Saves Board Space

• Mounting Information for SOT−23 Package Provided

−20 V

148 mW @ −10 V

−1.0 A

• NVR Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

P−Channel

• These Devices are Pb−Free and are RoHS Compliant

Applications

• DC−DC Converters

• Computers

• Printers

• PCMCIA Cards

• Cellular and Cordless Telephones

MARKING DIAGRAM/

PIN ASSIGNMENT

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Drain−to−Source Voltage

Gate−to−Source Voltage − Continuous

Drain Current

Symbol

Value

−20

Unit

Drain

DSS

ꢀ

SOT−23

CASE 318

STYLE 21

− Continuous @ T = 25°C

−1.0

−2.67

Gate

− Pulsed Drain Current (t ≤ 1 ms)

Source

Total Power Dissipation @ T = 25°C

400

ꢀ

= Specific Device Code

= Date Code

= Pb−Free Package

Operating and Storage Temperature Range

T , T

− 55 to

150

°C

stg

Thermal Resistance; Junction−to−Ambient

300

260

°C/W

°C

(Note: Microdot may be in either location)

Maximum Lead Temperature for Soldering

Purposes, (1/8″ from case for 10 s)

ORDERING INFORMATION

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

†

Device

Package

Shipping

NTR1P02T1G

SOT−23

3000 / Tape & Reel

(Pb−Free)

NTR1P02T3G

NVR1P02T1G

SOT−23

(Pb−Free)

10000 / Tape & Reel

3000 / Tape & Reel

SOT−23

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Publication Order Number:

October, 2016 − Rev. 8

NTR1P02T1/D

12 3 4 5

中文翻译

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NTR1P02T3G 替代型号

型号	品牌	替代类型	描述	数据表
NTR1P02T1G	ONSEMI	类似代替	Power MOSFET
NTR1P02LT3G	ONSEMI	类似代替	Power MOSFET
NTR1P02LT1G	ONSEMI	类似代替	Power MOSFET

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