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NTP5N60/D

更新时间： 2024-11-22 23:55:07
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
4页 42K
描述
Power MOSFET 5 Amps， 600 Volts

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NTP5N60/D 数据手册

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NTP5N60  
Preferred Devices  
Product Preview  
Power MOSFET  
5 Amps, 600 Volts  
N–Channel TO–220  
http://onsemi.com  
Designed for high voltage, high speed switching applications in  
power supplies, converters, power motor controls and bridge circuits.  
5 AMPERES  
600 VOLTS  
Features  
• Higher Current Rating  
• Lower R  
• Lower Capacitances  
DS(on)  
R
= 2400 mΩ  
DS(on)  
• Lower Total Gate Charge  
N–Channel  
D
• Tighter V Specifications  
SD  
• Avalanche Energy Specified  
Typical Applications  
• Switch Mode Power Supplies  
• PWM Motor Controls  
• Converters  
G
S
• Bridge Circuits  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
MARKING DIAGRAMS  
AND PIN ASSIGNMENTS  
C
Rating  
Symbol  
Value  
600  
Unit  
Vdc  
Vdc  
Vdc  
Drain–Source Voltage  
V
DSS  
Drain  
Drain–Gate Voltage (R  
= 1.0 MΩ)  
V
DGR  
600  
GS  
4
Gate–Source Voltage  
– Continuous  
V
V
"20  
"40  
GS  
GS  
– Non–Repetitive (t v10 ms)  
p
TO–220AB  
CASE 221A  
STYLE 5  
Drain– Continuous @ T 25°C  
I
I
5
3.8  
17.5  
Adc  
Apk  
NTP5N60  
LLYWW  
A
D
D
– Continuous @ T 100°C  
A
– Single Pulse (t v10 µs)  
I
p
DM  
Gate  
Source  
Total Power Dissipation @ T 25°C  
P
96  
0.77  
1.75  
Watts  
W/°C  
Watts  
A
D
1
Derate above 25°C  
2
Total Power Dissipation @ T 25°C  
3
A
Drain  
(Note 1.)  
NTP5N60 = Device Code  
Operating and Storage  
Temperature Range  
T , T  
J stg  
–55 to  
+150  
°C  
LL  
= Location Code  
Y
WW  
= Year  
= Work Week  
Single Drain–to–Source Avalanche  
E
80  
mJ  
AS  
Energy – Starting T = 25°C  
J
GS  
(V  
= 100 V, V  
= 10 Vdc,  
I (pk) = 5 A, L = 10 mH, V  
DD  
ORDERING INFORMATION  
= 600  
DS  
L
Vdc, R = 25 Ω)  
G
Device  
NTP5N60  
Package  
Shipping  
50 Units/Rail  
Thermal Resistance  
°C/W  
°C  
TO–220AB  
– Junction–to–Case  
– Junction–to–Ambient  
R
θJC  
R
θJA  
1.3  
62.5  
Preferred devices are recommended choices for future use  
and best overall value.  
Maximum Lead Temperature for  
Soldering Purposes, 1/8″ from case  
T
260  
L
for 10 seconds  
1. Repetitive rating; pulse width limited by maximum junction temperature.  
This document contains information on a product under development. ON Semiconductor  
reserves the right to change or discontinue this product without notice.  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
November, 2000 – Rev. 0  
NTP5N60/D  
1234

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