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NTP6413AN

更新时间： 2024-11-26 12:50:47
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 123K
描述
N-Channel Power MOSFET 100 V, 42 A, 28 m

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NTP6413AN 数据手册

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NTB6413AN, NTP6413AN,  
NVB6413AN  
N-Channel Power MOSFET  
100 V, 42 A, 28 mW  
Features  
• Low R  
DS(on)  
http://onsemi.com  
• High Current Capability  
• 100% Avalanche Tested  
I
D
MAX  
V
R
MAX  
DS(ON)  
(Note 1)  
• NVB Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
(BR)DSS  
100 V  
28 mW @ 10 V  
42 A  
• These Devices are Pb−Free and are RoHS Compliant  
N−Channel  
D
MAXIMUM RATINGS (T = 25°C Unless otherwise specified)  
J
Parameter  
Drain−to−Source Voltage  
Gate−to−Source Voltage − Continuous  
Symbol  
Value  
100  
$20  
42  
Unit  
V
V
DSS  
G
V
GS  
V
Continuous Drain  
Current R  
Steady  
State  
T
= 25°C  
= 100°C  
= 25°C  
I
D
A
C
q
JC  
S
T
C
28  
4
Power Dissipation  
R
Steady  
State  
T
C
P
D
136  
W
q
JC  
4
Pulsed Drain Current  
t = 10 ms  
p
I
178  
A
DM  
1
2
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
+175  
°C  
J
stg  
3
Source Current (Body Diode)  
I
S
42  
A
2
TO−220AB  
D PAK  
CASE 221A  
STYLE 5  
CASE 418B  
STYLE 2  
Single Pulse Drain−to−Source Avalanche  
E
AS  
200  
mJ  
1
Energy (V = 50 Vdc, V = 10 Vdc,  
DD  
GS  
2
I
= 36.5 A, L = 0.3 mH, R = 25 W)  
3
L(pk)  
G
Lead Temperature for Soldering  
T
260  
°C  
L
MARKING DIAGRAM  
& PIN ASSIGNMENT  
Purposes, 1/8″ from Case for 10 Seconds  
4
THERMAL RESISTANCE RATINGS  
Parameter  
4
Drain  
Drain  
Symbol  
Max  
1.1  
35  
Unit  
Junction−to−Case (Drain) Steady State  
Junction−to−Ambient (Note 1)  
R
°C/W  
q
JC  
NTB  
R
q
JA  
NTP  
6413ANG  
AYWW  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surface mounted on FR4 board using 1 sq in pad size,  
6413ANG  
AYWW  
2
1
Gate  
3
1
Gate  
3
Drain  
Source  
Source  
(Cu Area 1.127 sq in [2 oz] including traces).  
2
6413AN = Specific Device Code  
Drain  
G
A
Y
= Pb−Free Device  
= Assembly Location  
= Year  
WW = Work Week  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
July, 2012 − Rev. 3  
NTB6413AN/D  
 
1234567

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