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NTP6N60 PDF预览

NTP6N60

更新时间： 2024-11-22 23:55:07
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页数 文件大小 规格书
4页 74K
描述
TRANSISTOR MOSFET

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中文翻译

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NTP6N60 数据手册

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Preferred Device  
N–Channel Enhancement–Mode  
Silicon Gate  
http://onsemi.com  
This advanced TMOS E–FET is designed to withstand high energy  
in the avalanche and commutation modes. The new energy efficient  
design also offers a drain–to–source diode with a fast recovery time.  
Designed for low voltage, high speed switching applications in power  
supplies, converters and PWM motor controls. These devices are  
particularly well–suited for bridge circuits where diode speed and  
commutating safe operating areas are critical and offer additional  
safety margin against unexpected voltage transients.  
TMOS POWER FET  
6 AMPERES  
600 VOLTS  
R
= 1.2 Ω  
DS(on)  
N–Channel  
New Features of TMOS 7  
D
• Ultra Low On–Resistance Provides Higher Efficiency  
• Reduced Gate Charge  
Features Common to TMOS 7 and TMOS E–FETS  
G
• Avalanche Energy Specified  
• Diode Characterized for Use in Bridge Circuits  
• I  
and V  
Specified at Elevated Temperature  
S
DSS  
DS(on)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol  
Value  
600  
Unit  
Vdc  
Vdc  
Vdc  
Drain–Source Voltage  
V
DSS  
4
Drain–Gate Voltage (R  
= 1.0 MΩ)  
V
DGR  
600  
GS  
Gate–Source Voltage  
— Continuous  
V
GS  
20  
40  
— Non–Repetitive (t  
10 ms)  
V
GSM  
p
Drain  
Adc  
1
2
3
— Continuous  
— Continuous @ 100°C  
— Single Pulse (t 10 µs)  
I
I
6.0  
4.8  
21  
D
D
I
TO–220AB  
CASE 221A  
STYLE 5  
p
DM  
Total Power Dissipation  
Derate above 25°C  
P
142  
1.14  
Watts  
W/°C  
D
Operating and Storage Temperature  
Range  
T , T  
stg  
–55 to 150  
450  
°C  
J
PIN ASSIGNMENT  
1
2
3
4
Gate  
Drain  
Single Drain–to–Source Avalanche  
E
AS  
mJ  
Energy — Starting T = 25°C  
J
(V  
= 100 V, V  
= 10 Vdc,  
Source  
DD  
GS  
= 6 A, L = 25 mH, R = 25 Ω)  
I
L
G
Drain  
Thermal Resistance  
— Junction–to–Case  
°C/W  
°C  
R
R
0.88  
62.5  
θJC  
θJA  
— Junction–to–Ambient  
ORDERING INFORMATION  
Maximum Lead Temperature for  
Soldering Purposes, 1/8″ from case  
for 10 seconds  
T
260  
L
Device  
Package  
Shipping  
NTP6N60  
TO220AB  
50 Units/Rail  
This document contains information on a new product. Specifications and information  
herein are subject to change without notice.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
April, 2000 – Rev. 0  
NTP6N60/D  
1234

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