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NTHL095N65S3HF PDF预览

NTHL095N65S3HF

更新时间: 2024-10-29 11:15:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
10页 449K
描述
功率 MOSFET,N 沟道,SUPERFET® III,FRFET®,650 V,36 A,95 mΩ,TO-247

NTHL095N65S3HF 数据手册

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NTHL095N65S3HF  
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)  
C
Symbol  
Parameter  
Value  
650  
Unit  
V
V
DSS  
V
GSS  
Drain to Source Voltage  
Gate to Source Voltage  
DC  
30  
V
AC (f > 1 Hz)  
30  
I
D
Drain Current  
Continuous (T = 25°C)  
36  
A
C
Continuous (T = 100°C)  
22.8  
90  
C
I
Drain Current  
Pulsed (Note 1)  
A
mJ  
A
DM  
E
Single Pulsed Avalanche Energy (Note 2)  
Avalanche Current (Note 2)  
Repetitive Avalanche Energy (Note 1)  
MOSFET dv/dt  
440  
AS  
AS  
I
4.6  
E
2.72  
100  
mJ  
V/ns  
AR  
dv/dt  
Peak Diode Recovery dv/dt (Note 3)  
Power Dissipation  
50  
P
(T = 25°C)  
272  
W
W/°C  
°C  
D
C
Derate Above 25°C  
2.176  
55 to +150  
300  
T , T  
Operating and Storage Temperature Range  
J
STG  
T
Maximum Lead Temperature for Soldering, 1/8from Case for 5 seconds  
°C  
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. Repetitive rating: pulsewidth limited by maximum junction temperature.  
2. I = 4.6 A, R = 25 W, starting T = 25°C.  
AS  
G
J
3. I 18 A, di/dt 200 A/ms, V 400 V, starting T = 25°C.  
SD  
DD  
J
THERMAL CHARACTERISTICS  
Symbol  
Parameter  
Value  
0.46  
40  
Unit  
R
Thermal Resistance, Junction to Case, Max.  
Thermal Resistance, Junction to Ambient, Max.  
_C/W  
q
JC  
JA  
R
q
PACKAGE MARKING AND ORDERING INFORMATION  
Part Number  
Top Marking  
Package  
Packing Method  
Reel Size  
Tape Width  
Quantity  
30 Units  
NTHL095N65S3HF  
NTHL095N65S3HF  
TO247  
Tube  
N/A  
N/A  
www.onsemi.com  
2
 

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