Datasheet > NT6CL128M32CQ-H1NA

NT6CL128M32CQ-H1NA

更新时间： 2024-11-09 02:44:43

品牌	Logo	应用领域
南亚科技 - NANYA		动态存储器双倍数据速率光电二极管
页数	文件大小	规格书
166页	6046K
描述
Commercial Mobile LPDDR3 4Gb / 8Gb(DDP) SDRAM

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NTC Proprietary

Level: Property

LPDDR3 4Gb(SDP)/8Gb(DDP) SDRAM

4Gb:NT6CL128M32CQ(M), NT6CL256M16CM

8Gb:NT6CL256T32CQ(M), NT6CL128T64CR(4)

Commercial Mobile LPDDR3 4Gb / 8Gb(DDP) SDRAM

Features

 Data Integrity

 Basis LPDDR3 Compliant

- Low Power Consumption

- DRAM built-in Temperature Sensor for

Temperature Compensated Self Refresh (TCSR)

- 8n Prefetch Architecture and BL8 only

- Auto Refresh and Self Refresh Modes

 Power Saving Modes

 Signal Integrity

- Configurable DS for system compatibility

- Configurable On-Die Termination¹

- Deep Power Down Mode (DPD)

- Partial Array Self Refresh (PASR)

- Clock Stop capability during idle period

 HSUL12 interface and Power Supply

- VDD1= 1.70 to 1.95V

- ZQ Calibration for DS/ODT impedance accuracy via

external ZQ pad (240Ω± 1%)

 Training for Signals’ Synchronization

- DQ Calibration offering specific DQ output patterns

- CA Training

- Write Leveling via MR settings ²

- VDD2/VDDQ/VDDCA = 1.14 to 1.3V

Options

 Temperature Range (Tc)

 Speed Grade (DataRate/Read Latency)

- Commercial Grade = - 25℃ to + 85℃

- 1866 Mbps / RL=14

Programmable functions

 RL/WL Select (Set A / Set B)⁴

 nWRE ( nWR≦9 / nWR>9)

 PASR (bank/segment)

 R_ON(Typical:34.3/40/48/60/80)

 R_ON(PD34.3_PU40 / PD40_PU48 / PD34.3_PU48)

 R_TT(120/240)

Packages / Density information

Lead-free RoHS compliance and Halogen-free

Density, Signals and Addressing

4Gb (SDP)

X16 X32

8Gb (DDP)

X16 X32

Width x Length x Height

(mm)

Ball pitch

(mm)

FBGA Package

Items



CK//CKE



1:0]

168b PoP

178b

12.00 x 12.00 x 0.80

10.50 x 11.50 x 0.80

12.00 x 12.00 x 0.80

14.00 x 14.00 x 0.80

0.50

CK /  / CKE

CK /  / CKE[1:0]

[15:0]

[31:0]

[15:0]

[31:0]

0.65/0.80

Mixed

DQS/DM

[1:0] / [1:0] [3:0] / [3:0] [1:0] / [1:0]

[3:0] / [3:0]

CA[9:0]

BA[2:0]

R[13:0]

Bank Addr.

Row Addr.³

Column Addr.³

tREFI

216b PoP

256b PoP

0.40

C[10:0]

C[9:0]

C[10:0]

C[9:0]

3.9μs (Tc≦ 85^oC)

NOTE 1 Depending on ballout, ODT pin may be NOT supported so ODT die pad is connected to Vss inside the package.

NOTE 2 Write Leveling DQ feedback on all DQs

NOTE 3 Row and Column Addresses values on the CA bus that are not used are “don’t care.”

NOTE 4 For this operation, please confirm notices with NTC.

Version 1.4

02/2018

Nanya Technology Corp.

NTC has the rights to change any specifications or product herein without notification.

12 3 4 5 6 7...166

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与NT6CL128M32CQ-H1NA相关器件

型号	品牌	获取价格	描述	数据表
NT6CL128M32CQM	NANYA	获取价格	Commercial Mobile LPDDR3 4Gb / 8Gb(DDP) SDRAM
NT6CL128M32CR-H1NA	NANYA	获取价格	Commercial Mobile LPDDR3 4Gb / 8Gb(DDP) SDRAM
NT6CL128M32D4-H1NA	NANYA	获取价格	Commercial Mobile LPDDR3 4Gb / 8Gb(DDP) SDRAM
NT6CL128M32DM	NANYA	获取价格	Commercial Mobile LPDDR3 4Gb / 8Gb(DDP) SDRAM
NT6CL128M32DM-H1	NANYA	获取价格	Commercial Mobile LPDDR3 4Gb / 8Gb(DDP) SDRAM
NT6CL128M32DM-H1NA	NANYA	获取价格	Commercial Mobile LPDDR3 4Gb / 8Gb(DDP) SDRAM
NT6CL128M32DMQ	NANYA	获取价格	Commercial Mobile LPDDR3 4Gb / 8Gb(DDP) SDRAM
NT6CL128M32DQ-H1	NANYA	获取价格	Commercial Mobile LPDDR3 4Gb / 8Gb(DDP) SDRAM
NT6CL128M32DQ-H1NA	NANYA	获取价格	Commercial Mobile LPDDR3 4Gb / 8Gb(DDP) SDRAM
NT6CL128M32DR-H1NA	NANYA	获取价格	Commercial Mobile LPDDR3 4Gb / 8Gb(DDP) SDRAM

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