Datasheet > NT6CL128T64DR-H1

NT6CL128T64DR-H1

更新时间： 2024-11-09 02:45:23

品牌	Logo	应用领域
南亚科技 - NANYA		动态存储器双倍数据速率光电二极管
页数	文件大小	规格书
157页	5702K
描述
Commercial Mobile LPDDR3 4Gb / 8Gb(DDP) SDRAM

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数据手册

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NT6CL128T64DR-H1 数据手册

NTC Proprietary

Level: Property

Preliminary

LPDDR3 4Gb/8Gb(DDP) SDRAM

4Gb:NT6CL128M32DM(Q), NT6CL256M16DM

8Gb: NT6CL128T64DR(4)

Commercial Mobile LPDDR3 4Gb / 8Gb(DDP) SDRAM

Features

 Data Integrity

 Basis LPDDR3 Compliant

- Low Power Consumption

- DRAM built-in Temperature Sensor for

Temperature Compensated Self Refresh (TCSR)

- 8n Prefetch Architecture and BL8 only

- Auto Refresh and Self Refresh Modes

 Power Saving Modes

 Signal Integrity

- Configurable DS for system compatibility

- Configurable On-Die Termination¹

- Deep Power Down Mode (DPD)

- Partial Array Self Refresh (PASR)

- Clock Stop capability during idle period

 HSUL12 interface and Power Supply

- VDD1= 1.70 to 1.95V

- ZQ Calibration for DS/ODT impedance accuracy via

external ZQ pad (240Ω± 1%)

 Training for Signals’ Synchronization

- DQ Calibration offering specific DQ output patterns

- CA Training

- Write Leveling via MR settings ²

- VDD2/VDDQ/VDDCA = 1.14 to 1.3V

Programmable functions

 RL/WL Select (Set A / Set B)

 nWRE ( nWR≦9 / nWR>9)

 PASR (bank/segment)

 R_ON(Typical:34.3/40/48/60/80)

 R_ON(PD34.3_PU40 / PD40_PU48 / PD34.3_PU48)

 R_TT(120/240)

Options

 Temperature Range (Tc)

 Speed Grade (DataRate/Read Latency)

- Commercial Grade : - 30℃ to +85℃, extending 105℃⁴

- 1866 Mbps / RL=14

 Package Information

 Density, Signals and Addressing

Lead-free RoHS compliance and Halogen-free

4Gb (SDP)

X16 X32

8Gb (DDP)

X64(2ch)

Items

(FBGA Package)

Width x Length x Height

(mm)

Ball pitch

(mm)

Items



CK//CKE



_a/b

CK /  / CKE_a/b

[31:0] _a/b

168b PoP

178b

CK /  / CKE

12.00 x 12.00 x 0.83

10.50 x 11.50 x 0.83

12.00 x 12.00 x 0.83

14.00 x 14.00 x 0.83

0.50

[15:0]

[1:0] / [1:0]

CA[9:0]

[31:0]

DQS/DM

[3:0] / [3:0]

[3:0] _a/b / [3:0] _a/b

CA[9:0] _a/b

0.65/0.80

Mixed

Bank Addr.

Row Addr.³

Column Addr.³

Tc≦85℃

BA[2:0]

R[13:0]

C[9:0]

216b PoP

256b PoP

0.40

C[10:0]

C[9:0]

3.9μs

tREFI

85℃<Tc≦95℃

95℃<Tc≦105℃

1.95μs

0.975μs

NOTE 1 Depending on ballout, ODT pin may be NOT supported so ODT die pad is connected to Vss inside the package.

NOTE 2 Write Leveling DQ feedback on all DQs

NOTE 3 Row and Column Addresses values on the CA bus that are not used are “don’t care.”

NOTE 4 AC/DC will be derated when above 85 ^oC

Version 1.2

Nanya Technology Corp.

12/2018

NTC has the rights to change any specifications or product herein without notification.

12 3 4 5 6 7...157

中文翻译

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与NT6CL128T64DR-H1相关器件

型号	品牌	获取价格	描述	数据表
NT6CL128T64DR-H1NA	NANYA	获取价格	Commercial Mobile LPDDR3 4Gb / 8Gb(DDP) SDRAM
NT6CL256M16C4-H1NA	NANYA	获取价格	Commercial Mobile LPDDR3 4Gb / 8Gb(DDP) SDRAM
NT6CL256M16CM	NANYA	获取价格	Commercial Mobile LPDDR3 4Gb / 8Gb(DDP) SDRAM
NT6CL256M16CM-H1	NANYA	获取价格	Commercial Mobile LPDDR3 4Gb / 8Gb(DDP) SDRAM
NT6CL256M16CM-H1NA	NANYA	获取价格	Commercial Mobile LPDDR3 4Gb / 8Gb(DDP) SDRAM
NT6CL256M16CQ-H1NA	NANYA	获取价格	Commercial Mobile LPDDR3 4Gb / 8Gb(DDP) SDRAM
NT6CL256M16CR-H1NA	NANYA	获取价格	Commercial Mobile LPDDR3 4Gb / 8Gb(DDP) SDRAM
NT6CL256M16D4-H1NA	NANYA	获取价格	Commercial Mobile LPDDR3 4Gb / 8Gb(DDP) SDRAM
NT6CL256M16DM	NANYA	获取价格	Commercial Mobile LPDDR3 4Gb / 8Gb(DDP) SDRAM
NT6CL256M16DM-H1	NANYA	获取价格	Commercial Mobile LPDDR3 4Gb / 8Gb(DDP) SDRAM

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