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NSV12100UW3TCG

更新时间： 2023-06-19 14:32:05

品牌	Logo	应用领域
安森美 - ONSEMI		小信号双极晶体管
页数	文件大小	规格书
5页	81K
描述
Low VCE(sat) Transistor, PNP, 12 V, 1.0 A

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NSV12100UW3TCG 技术参数

是否无铅：	不含铅	生命周期：	Active
Reach Compliance Code：	compliant	Factory Lead Time：	8 weeks
风险等级：	5.75	Base Number Matches：	1

NSV12100UW3TCG 数据手册

NSS12100UW3TCG

12 V, 1 A, Low V_CE(sat)

PNP Transistor

ON Semiconductor's e PowerEdge family of low V

CE(sat)

transistors are miniature surface mount devices featuring ultra low

saturation voltage (V ) and high current gain capability. These

are designed for use in low voltage, high speed switching applications

where affordable efficient energy control is important.

CE(sat)

http://onsemi.com

12 VOLTS, 1.0 AMPS

Typical application are DC-DC converters and power management

in portable and battery powered products such as cellular and cordless

phones, PDAs, computers, printers, digital cameras and MP3 players.

Other applications are low voltage motor controls in mass storage

products such as disc drives and tape drives. In the automotive

industry they can be used in air bag deployment and in the instrument

cluster. The high current gain allows e PowerEdge devices to be

driven directly from PMU's control outputs, and the Linear Gain

(Beta) makes them ideal components in analog amplifiers.

PNP LOW V_CE(sat)TRANSISTOR

EQUIVALENT R_DS(on)400 mW

COLLECTOR

BASE

Features

•ꢀHigh Current Capability (1 A)

•ꢀHigh Power Handling (Up to 740 mW)

EMITTER

•ꢀLow V

(200 mV Typical @ 500 mA)

CE(s)

•ꢀSmall Size

•ꢀLow Noise

•ꢀThis is a Pb-Free Device

WDFN3

CASE 506AU

Benefits

•ꢀHigh Specific Current and Power Capability Reduces Required PCB Area

•ꢀReduced Parasitic Losses Increases Battery Life

MARKING DIAGRAM

VG M

MAXIMUM RATINGS (T = 25°C)

Rating

Symbol

Max

-12

-5.0

Unit

Vdc

Adc

VG = Specific Device Code

= Date Code

= Pb-Free Package

Collector‐Emitter Voltage

Collector‐Base Voltage

Emitter‐Base Voltage

CEO

CBO

EBO

ORDERING INFORMATION

Collector Current - Continuous

Collector Current - Peak

-1.0

-2.0

†

Device

NSS12100UW3TCG

Package

Shipping

Electrostatic Discharge

ESD

HBM Class 3B

MM Class C

WDFN3

(Pb-Free)

3000/

Tape & Reel

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

April, 2008 - Rev. 0

Publication Order Number:

NSS12100UW3/D

12 3 4 5

中文翻译

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