Datasheet > 晶体管 > 小信号双极晶体管> NSV12100XV6T1G

NSV12100XV6T1G

更新时间： 2023-06-19 14:32:05

品牌	Logo	应用领域
安森美 - ONSEMI		开关光电二极管小信号双极晶体管
页数	文件大小	规格书
5页	100K
描述
低饱和压晶体管，PNP，12 V，1.0 A

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技术参数
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NSV12100XV6T1G 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	SMALL OUTLINE, R-PDSO-F6	针数：	6
Reach Compliance Code：	compliant	ECCN代码：	EAR99
Factory Lead Time：	17 weeks	风险等级：	5.74
最大集电极电流 (IC)：	1 A	基于收集器的最大容量：	20 pF
集电极-发射极最大电压：	12 V	配置：	SINGLE
最小直流电流增益 (hFE)：	90	JESD-30 代码：	R-PDSO-F6
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	6
最高工作温度：	150 °C	最低工作温度：	-55 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.65 W	表面贴装：	YES
端子面层：	Tin (Sn)	端子形式：	FLAT
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	VCEsat-Max：	0.44 V
Base Number Matches：	1

NSV12100XV6T1G 数据手册

NSS12100XV6T1G

12 V, 1 A, Low V_CE(sat)

PNP Transistor

ON Semiconductor’s e PowerEdge family of low V

CE(sat)

transistors are miniature surface mount devices featuring ultra low

saturation voltage (V ) and high current gain capability. These

are designed for use in low voltage, high speed switching applications

where affordable efficient energy control is important.

CE(sat)

http://onsemi.com

12 VOLTS, 1.0 AMPS

PNP LOW V_CE(sat)TRANSISTOR

EQUIVALENT R_DS(on)300 mW

Typical application are DC−DC converters and power management

in portable and battery powered products such as cellular and cordless

phones, PDAs, computers, printers, digital cameras and MP3 players.

Other applications are low voltage motor controls in mass storage

products such as disc drives and tape drives. In the automotive

industry they can be used in air bag deployment and in the instrument

COLLECTOR

1, 2, 5, 6

cluster. The high current gain allows e PowerEdge devices to be

driven directly from PMU’s control outputs, and the Linear Gain

(Beta) makes them ideal components in analog amplifiers.

BASE

Features

• High Current Capability (1 A)

EMITTER

• High Power Handling (Up to 650 mW)

• Low V

(150 mV Typical @ 500 mA)

CE(s)

• Small Size

• This is a Pb−Free Device

SOT−563

CASE 463A

STYLE 4

Benefits

• High Specific Current and Power Capability Reduces Required PCB Area

• Reduced Parasitic Losses Increases Battery Life

DEVICE MARKING

MAXIMUM RATINGS (T = 25°C)

Rating

Symbol

Max

−12

−5.0

Unit

Vdc

Adc

VE M G

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

CEO

CBO

EBO

VE = Specific Device Code

= Month Code

= Pb−Free Package

(Note: Microdot may be in either location)

Collector Current − Continuous

Collector Current − Peak

−1.0

−2.0

Electrostatic Discharge

ESD

HBM Class 3

MM Class C

ORDERING INFORMATION

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

†

Device

Package

Shipping

NSS12100XV6T1G SOT−563 4000/Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

November, 2006 − Rev. 0

NSS12100XV6/D

12 3 4 5

中文翻译

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NSV12100XV6T1G 替代型号

型号	品牌	替代类型	描述	数据表
NSS12100XV6T1G	ONSEMI	功能相似	12 V, 1 A, Low VCE(sat) PNP Transistor

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