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NSV12200LT1G PDF预览

NSV12200LT1G

更新时间： 2024-09-26 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 光电二极管小信号双极晶体管
页数 文件大小 规格书
5页 103K
描述
低饱和压晶体管，PNP，12 V，4.0 A

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NSV12200LT1G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-G3Reach Compliance Code：compliant
Factory Lead Time：8 weeks风险等级：5.74
最大集电极电流 (IC)：2 A基于收集器的最大容量：120 pF
集电极-发射极最大电压：12 V配置：Single
最小直流电流增益 (hFE)：150JEDEC-95代码：TO-236
JESD-30 代码：R-PDSO-G3JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：3最高工作温度：150 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：PNP最大功率耗散 (Abs)：0.71 W
参考标准：AEC-Q101表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL晶体管元件材料：SILICON
标称过渡频率 (fT)：100 MHz最大关闭时间（toff）：380 ns
最大开启时间（吨）：180 nsVCEsat-Max：0.18 V
Base Number Matches：1

NSV12200LT1G 数据手册

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NSS12200LT1G  
12 V, 4.0 A, Low VCE(sat)  
PNP Transistor  
2
ON Semiconductor’s e PowerEdge family of low V  
CE(sat)  
transistors are miniature surface mount devices featuring ultra low  
saturation voltage (V ) and high current gain capability. These  
CE(sat)  
are designed for use in low voltage, high speed switching applications  
where affordable efficient energy control is important.  
http://onsemi.com  
Typical applications are DC−DC converters and power management  
in portable and battery powered products such as cellular and cordless  
phones, PDAs, computers, printers, digital cameras and MP3 players.  
Other applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
−12 VOLTS  
4.0 AMPS  
PNP LOW VCE(sat) TRANSISTOR  
EQUIVALENT RDS(on) 65 mW  
2
cluster. The high current gain allows e PowerEdge devices to be  
COLLECTOR  
3
driven directly from PMU’s control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
• This is a Pb−Free Device  
1
BASE  
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Symbol  
Max  
−12  
Unit  
Vdc  
Vdc  
Vdc  
A
2
EMITTER  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
V
CEO  
V
CBO  
V
EBO  
−12  
3
−7.0  
−2.0  
−4.0  
Collector Current − Continuous  
Collector Current − Peak  
I
C
1
2
I
A
CM  
SOT−23 (TO−236)  
CASE 318  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
STYLE 6  
Total Device Dissipation  
P
(Note 1)  
460  
mW  
D
T = 25°C  
Derate above 25°C  
A
DEVICE MARKING  
3.7  
mW/°C  
°C/W  
Thermal Resistance,  
Junction−to−Ambient  
R
(Note 1)  
270  
q
JA  
VE MG  
G
Total Device Dissipation  
P
(Note 2)  
(Note 2)  
540  
mW  
D
1
T = 25°C  
A
Derate above 25°C  
4.3  
mW/°C  
°C/W  
VE = Specific Device Code  
Thermal Resistance,  
Junction−to−Ambient  
R
q
230  
JA  
M
G
= Date Code*  
= Pb−Free Package  
(Note: Microdot may be in either location)  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
Total Device Dissipation  
(Single Pulse < 10 sec.)  
P
710  
mW  
Dsingle  
(Note 3)  
Junction and Storage  
Temperature Range  
T , T  
−55 to  
+150  
°C  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
2
1. FR−4 @ 100 mm , 1 oz. copper traces.  
NSS12200LT1G  
SOT−23  
3000/Tape & Reel  
2
2. FR−4 @ 500 mm , 1 oz. copper traces.  
(Pb−Free)  
3. Thermal response.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
September, 2006 − Rev. 0  
NSS12200L/D  
 
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