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NS41256S35E/883 PDF预览

NS41256S35E/883

更新时间: 2024-11-09 20:00:47
品牌 Logo 应用领域
德州仪器 - TI 静态存储器内存集成电路
页数 文件大小 规格书
18页 40K
描述
32KX8 STANDARD SRAM, 35ns, CQCC32, 0.450 X 0.550 INCH, CERAMIC, LCC-32

NS41256S35E/883 技术参数

生命周期:Obsolete包装说明:QCCN, LCC32,.45X.55
Reach Compliance Code:unknownECCN代码:3A001.A.2.C
HTS代码:8542.32.00.41风险等级:5.57
最长访问时间:35 nsI/O 类型:COMMON
JESD-30 代码:R-CQCC-N32内存密度:262144 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端子数量:32
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:32KX8
输出特性:3-STATE封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:QCCN封装等效代码:LCC32,.45X.55
封装形状:RECTANGULAR封装形式:CHIP CARRIER
并行/串行:PARALLEL电源:5 V
认证状态:Not Qualified筛选级别:38535Q/M;38534H;883B
最大待机电流:0.02 A最小待机电流:4.5 V
子类别:SRAMs最大压摆率:0.15 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子形式:NO LEAD端子节距:1.27 mm
端子位置:QUADBase Number Matches:1

NS41256S35E/883 数据手册

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MICROCIRCUIT DATA SHEET  
Original Creation Date: 11/28/95  
Last Update Date: 02/05/97  
MNNS41256S35-X REV 0A0  
Last Major Revision Date: 11/28/95  
256K Static RAM (32K x 8 bit)  
General Description  
NS41256S35 is a high performance, standard power version CMOS static RAM organized as  
32,768 X 8 bits with 35nS address to access time. The NS41256 operates from a single +5V  
power supply and all the inputs and outputs are fully TTL compatible.  
Industry Part Number  
NS Part Numbers  
NS41256S35  
NS41256S35E/883  
NS41256S35J/883  
Prime Die  
PDM41256V  
Processing  
Subgrp Description  
Temp (oC)  
MIL-STD-883, Method 5004  
1
Static tests at  
+25  
2
Static tests at  
+125  
-55  
3
Static tests at  
4
Dynamic tests at  
Dynamic tests at  
Dynamic tests at  
Functional tests at  
Functional tests at  
Functional tests at  
Switching tests at  
Switching tests at  
Switching tests at  
+25  
Quality Conformance Inspection  
5
+125  
-55  
6
MIL-STD-883, Method 5005  
7
+25  
8A  
8B  
9
+125  
-55  
+25  
10  
11  
+125  
-55  
1

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