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NS41256L35E/883 PDF预览

NS41256L35E/883

更新时间: 2024-01-05 11:23:15
品牌 Logo 应用领域
德州仪器 - TI 静态存储器内存集成电路
页数 文件大小 规格书
18页 41K
描述
32KX8 STANDARD SRAM, 35ns, CQCC32, 0.450 X 0.550 INCH, CERAMIC, LCC-32

NS41256L35E/883 技术参数

生命周期:Obsolete包装说明:QCCN, LCC32,.45X.55
Reach Compliance Code:unknownECCN代码:3A001.A.2.C
HTS代码:8542.32.00.41风险等级:5.84
最长访问时间:35 nsI/O 类型:COMMON
JESD-30 代码:R-CQCC-N32内存密度:262144 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端子数量:32
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:32KX8
输出特性:3-STATE封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:QCCN封装等效代码:LCC32,.45X.55
封装形状:RECTANGULAR封装形式:CHIP CARRIER
并行/串行:PARALLEL电源:5 V
认证状态:Not Qualified筛选级别:38535Q/M;38534H;883B
最大待机电流:0.0005 A最小待机电流:2 V
子类别:SRAMs最大压摆率:0.13 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子形式:NO LEAD端子节距:1.27 mm
端子位置:QUADBase Number Matches:1

NS41256L35E/883 数据手册

 浏览型号NS41256L35E/883的Datasheet PDF文件第1页浏览型号NS41256L35E/883的Datasheet PDF文件第2页浏览型号NS41256L35E/883的Datasheet PDF文件第4页浏览型号NS41256L35E/883的Datasheet PDF文件第5页浏览型号NS41256L35E/883的Datasheet PDF文件第6页浏览型号NS41256L35E/883的Datasheet PDF文件第7页 
MICROCIRCUIT DATA SHEET  
MNNS41256L35-X REV 0A0  
(Absolute Maximum Ratings)  
(Note 1)  
Terminal Voltage with Respect to GND (VTERM)  
Temperature Under Bias (TBIAS)  
Storage Temperature (TSTG)  
-0.5V to +7.0V  
-65 C to +135 C  
-65 C to +150 C  
1.0W  
Power Dissipation (PT)  
DC Output Current (IOUT)  
50mA  
Note 1: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent  
damage to the device. This is a stress rating only and functional operation of the  
device at these or any other conditions above those indicated in the operational  
sections of this specification is not implied. Exposure to absolute maximum rating  
conditions for extended periods may affect reliability.  
Recommended Operating Conditions  
DC Supply Voltage (VCC)  
4.5V to 5.5V  
DC Supply Voltage (GND)  
0V  
Operating Temperature Range Ambient  
-55 C to +125 C  
3

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