NP80N055

更新时间： 2024-02-17 16:17:44

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描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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中文翻译

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数据手册

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NP80N055 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

NP80N055CLE, NP80N055DLE, NP80N055ELE

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

ORDERING INFORMATION

These products are N-channel MOS Field Effect

Transistor designed for high current switching

applications.

PART NUMBER

NP80N055CLE

NP80N055DLE

NP80N055ELE

PACKAGE

TO-220AB

TO-262

TO-263

FEATURES

• Channel temperature 175 degree rated

• Super low on-state resistance

R^DS(on)1= 11 mΩ MAX. (V^GS= 10 V, I^D= 40 A)

R^DS(on)2= 13 mΩ MAX. (V^GS= 5 V, I^D= 40 A)

• Low C^iss: C^iss= 2900 pF TYP.

• Built-in gate protection diode

(TO-220AB)

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Drain to Source Voltage

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T

±20

Gate to Source Voltage

Drain Current (DC) ^Note1

±80

(TO-262)

Drain Current (Pulse) ^Note2

Total Power Dissipation (T^A= 25 °C)

Total Power Dissipation (T^C= 25 °C)

Single Avalanche Current ^Note3

Single Avalanche Energy ^Note3

Channel Temperature

±200

1.8

P^T

120

I^AS

45 / 30 / 10

2.0 / 90 / 100

175

E^AS

°C

T^ch

Storage Temperature

T^stg

–55 to +175

(TO-263)

Notes 1. Calculated constant current according to MAX. allowable channel

temperature.

2. PW ≤ 10 µs, Duty cycle ≤ 1 %

3. Starting T^ch= 25 °C, R^G= 25 Ω , V^GS= 20 V→0 V (see Figure 4.)

THERMAL RESISTANCE

Channel to Case

R^th(ch-C)

R^th(ch-A)

1.25

83.3

°C/W

Channel to Ambient

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published March 2001 NS CP(K)

Printed in Japan

D14097EJ3V0DS00 (3rd edition)

The mark ★ shows major revised points.

1999,2000

12 3 4 5 6 7 8

中文翻译

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与NP80N055相关器件

型号	品牌	获取价格	描述	数据表
NP80N055CHE	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP80N055CHE-AZ	RENESAS	获取价格	NP80N055CHE-AZ
NP80N055CHE-S12-AZ	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP80N055CLE	NEC	获取价格	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NP80N055CLE-AZ	RENESAS	获取价格	NP80N055CLE-AZ
NP80N055CLE-S12-AZ	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP80N055DHE	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP80N055DHE-AY	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,80A I(D),TO-262
NP80N055DHE-AZ	NEC	获取价格	Power Field-Effect Transistor, 80A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Met
NP80N055DHE-S12-AY	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET