生命周期: | Transferred | 零件包装代码: | TO-262AA |
包装说明: | IN-LINE, R-PSIP-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.12 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 100 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 55 V | 最大漏极电流 (ID): | 80 A |
最大漏源导通电阻: | 0.011 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-262AA | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 200 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NP80N055DHE-S12-AY | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET | |
NP80N055DLE | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
NP80N055DLE-AY | RENESAS |
获取价格 |
暂无描述 | |
NP80N055DLE-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 55V, 0.015ohm, 1-Element, N-Channel, Silicon, Met | |
NP80N055DLE-S12-AY | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET | |
NP80N055DLE-S12-AY | RENESAS |
获取价格 |
80A, 55V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, LEAD FREE, MP-25, TO-262, 3 PI | |
NP80N055EHE | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET | |
NP80N055EHE-E1-AY | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET | |
NP80N055EHE-E2-AY | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET | |
NP80N055ELE | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |