NP80N055DHE-S12-AY

更新时间： 2024-01-11 23:06:27

品牌	Logo	应用领域
日电电子 - NEC		晶体开关晶体管场效应晶体管
页数	文件大小	规格书
10页	206K
描述
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

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NP80N055DHE-S12-AY 数据手册

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DATA SHEET

MOS FIELD EFFECT TRANSISTOR

NP80N055EHE, NP80N055KHE

NP80N055CHE, NP80N055DHE, NP80N055MHE, NP80N055NHE

SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

<R>

ORDERING INFORMATION

PART NUMBER

LEAD PLATING

Pure Sn (Tin)

PACKING

PACKAGE

NP80N055EHE-E1-AY ^{Note1, 2}

NP80N055EHE-E2-AY ^{Note1, 2}

NP80N055KHE-E1-AY ^Note1

NP80N055KHE-E2-AY ^Note1

NP80N055CHE-S12-AZ ^{Note1, 2}

NP80N055DHE-S12-AY ^{Note1, 2}

NP80N055MHE-S18-AY ^Note1

NP80N055NHE-S18-AY ^Note1

TO-263 (MP-25ZJ) typ. 1.4 g

Tape 800 p/reel

TO-263 (MP-25ZK) typ. 1.5 g

Sn-Ag-Cu

TO-220 (MP-25) typ. 1.9 g

TO-262 (MP-25 Fin Cut) typ. 1.8 g

TO-220 (MP-25K) typ. 1.9 g

TO-262 (MP-25SK) typ. 1.8 g

Tube 50 p/tube

Pure Sn (Tin)

Notes 1. Pb-free (This product does not contain Pb in the external electrode.)

2. Not for new design

(TO-220)

FEATURES

• Channel temperature 175 degree rated

• Super low on-state resistance

R^DS(on)= 11 mΩ MAX. (VGS = 10 V, ID = 40 A)

• Low input capacitance

(TO-262)

C^iss= 2400 pF TYP.

• Built-in gate protection diode

(TO-263)

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D14096EJ7V0DS00 (7th edition)

Date Published October 2007 NS

Printed in Japan

2002, 2007

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

12 3 4 5 6 7...10

中文翻译

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与NP80N055DHE-S12-AY相关器件

型号	品牌	获取价格	描述	数据表
NP80N055DLE	NEC	获取价格	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NP80N055DLE-AY	RENESAS	获取价格	暂无描述
NP80N055DLE-AZ	NEC	获取价格	Power Field-Effect Transistor, 80A I(D), 55V, 0.015ohm, 1-Element, N-Channel, Silicon, Met
NP80N055DLE-S12-AY	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP80N055DLE-S12-AY	RENESAS	获取价格	80A, 55V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, LEAD FREE, MP-25, TO-262, 3 PI
NP80N055EHE	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP80N055EHE-E1-AY	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP80N055EHE-E2-AY	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP80N055ELE	NEC	获取价格	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NP80N055ELE-E1-AY	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET